化学气相沉积法制备InSe纳米片及其近红外光探测性能  

Synthesis of InSe Nanoflakes with Near-infrared Photoresponse Grown by Chemical Vapor Deposition

作　　者：黄文娟[1] 候华毅 陈相柏 翟天佑[2] HUANG Wenjuan;HOU Huayi;CHEN Xiangbai;ZHAI Tianyou(Hubei Key Laboratory of Optical Information and Pattern Recognition,Wuhan Institute of Technology,Wuhan 430205,China;School of Materials Science and Engineering,State Key Laboratory of Material Processing and Die&Mould Technology,Huazhong University of Science and Technology,Wuhan 430074,China)

机构地区：[1]武汉工程大学光学信息与模式识别湖北省重点实验室,武汉430205 [2]华中科技大学材料科学与工程学院,材料成形与模具技术国家重点实验室,武汉430074

出　　处：《高等学校化学学报》2020年第4期682-689,共8页Chemical Journal of Chinese Universities

基　　金：国家自然科学基金(批准号:51902227,11574241);华中科技大学材料成形与模具技术国家重点实验室开放课题研究基金(批准号:P2020-021)资助.

摘　　要：采用化学气相沉积法在云母衬底上制备了二维In Se纳米片,研究了生长温度对二维In Se纳米片晶相、形貌、尺寸及厚度的影响.构筑了基于二维In Se纳米片的光探测器并研究了其光探测性能,结果表明,在808 nm的近红外光辐照下,其光响应度为1. 5 A/W,外量子效率为230%,可探测度为3. 1×108Jones(1 Jones=1 cm·Hz1/2·W-1),上升和衰减时间分别为0. 5和0. 8 s.With a graphene-like two-dimensional(2D)layered structure,InSe has a great potential in the application of electronics and optoelectronic devices.Herein,2D InSe nanoflakes were synthesized via a chemical vapor deposition(CVD)method,and the effect of growth temperature on the crystalline phase,morphology,size and thickness of 2D InSe nanoflakes were studied.Photodetectors based on the as-synthesized 2D InSe nanoflakes were fabricated and its photodetection performance were studied.Under the illumination wavelength of 808 nm,the as-fabricated InSe photodetector exhibited a good near-infrared(NIR)photo-response,showing a photoresponsivity of 1.5 A/W,an external quantum efficiency of 230%and a detectivity of 3.1×10^8 Jones,accompanied with a rise and decay time of 0.5 and 0.8 s,respectively,providing a good prospects for its practical application in NIR photodetectors.

关 键 词：二维材料 硒化铟 化学气相沉积 红外探测器 

分 类 号：O614.37[理学—无机化学]