气相捕获腔对石墨烯低压化学气相沉积形核生长的影响  

Effect of the Vapor Trapping Chamber on the Nucleation and Growth of Graphene by Low Pressure Chemical Vapor Deposition

作　　者：史永贵 桑昭君 王允威 赵高扬[1] SHI Yonggui;SANG Zhaojun;WANG Yunwei;ZHAO Gaoyang(School of Materials Science and Engineering, Xi’an University of Technology, Xi’an 710048, China;School of Biological and Chemical Engineering, Panzhihua University, Panzhihua 617000, China)

机构地区：[1]西安理工大学材料科学与工程学院,西安710048 [2]攀枝花学院生物与化学工程学院,攀枝花617000

出　　处：《人工晶体学报》2020年第3期439-445,共7页Journal of Synthetic Crystals

基　　金：陕西省教育厅自然科学专项(17JK0571);陕西省自然科学基础研究专项(2017JQ5107);攀枝花市科技计划项目(2017CY-G-18)。

摘　　要：基于石墨烯低压化学气相沉积技术,通过调控甲烷流量对比研究了传统生长腔和气相捕获腔中石墨烯在铜箔衬底上的形核生长特点。结果表明,与传统生长腔相比,气相捕获腔能够将石墨烯的形核密度降低3个数量级,并促使石墨烯晶核快速长大。同时,气相捕获腔能够为石墨烯提供一个稳定的生长环境,有利于制备晶格完美的石墨烯晶畴,并为石墨烯晶畴的融合提供更多的有效活性碳原子,加速石墨烯晶畴之间的融合,提高石墨烯薄膜的质量。在此基础上分析了气相捕获腔对石墨烯低压化学气相沉积形核生长的影响机理。In this paper,the nucleation and growth characteristics of graphene fabricated on copper foils by low pressure chemical vapor deposition in both conventional growth chamber and vapor trapping chamber were comparatively studied via adjusting the flow rate of CH4.The results indicate that the nucleation density of graphene in the vapor trapping chamber decreases three orders of magnitude than that in the conventional growth chamber and graphene nucleus could grow up rapidly.Meanwhile,the vapor trapping chamber was in favor of the fabrication of perfect graphene domains by providing a stable growth environment.By supplying adequate effective activated carbon atoms,the rate of jointing process of graphene domains in the vapor trapping chamber could be accelerated,bettering the quality of graphene film.On the basis of the experimental results,the mechanism of the vapor trapping chamber impacting the nucleation and growth of graphene was discussed as well.

关 键 词：石墨烯 低压化学气相沉积 气相捕获腔 铜箔 形核 生长 

分 类 号：TB383[一般工业技术—材料科学与工程] O613.71[理学—无机化学]