雾化施液CMP中铌酸锂晶片抛光液优化及抛光效果  

Polishing Slurry Optimization and Polishing Effect of Lithium Niobate Wafer in Atomized Slurry Applied CMP

作　　者：马驰 李庆忠 苑晓策 Ma Chi;Li Qingzhong;Yuan Xiaoce(School of Mechanical Engineering,Jiangnan University,Wuxi 214122,China)

机构地区：[1]江南大学机械工程学院,江苏无锡214122

出　　处：《半导体技术》2020年第3期213-218,共6页Semiconductor Technology

基　　金：国家自然科学基金资助项目(51175228)。

摘　　要：采用超声波精细雾化施液对铌酸锂晶片进行了化学机械抛光(CMP)实验,研究抛光液复配参数(二氧化硅磨料含量、氧化剂含量、络合剂含量、表面活性剂含量和pH值)对抛光效果的影响,以材料去除速率和表面粗糙度为评价指标,根据正交试验结果得到最优组分的抛光液,分析铌酸锂的去除机理,并与传统抛光进行对比。结果表明:二氧化硅磨料和氧化剂对铌酸锂晶片抛光效果影响显著。当二氧化硅磨料质量分数为20%、过氧化氢质量分数为2.5%、柠檬酸质量分数为1.6%、pH值为11和聚乙烯吡咯烷酮质量分数为0.4%时,材料去除速率为401.52 nm/min,表面粗糙度为1.04 nm。在相同的抛光工艺参数下,传统CMP的材料去除速率为427.68 nm/min,表面粗糙度为1.12 nm;超声精细雾化抛光效果与传统CMP效果相近,但雾化施液方式的抛光液用量低,是传统CMP的1/7。Ultrasonic fine atomized liquid polishing was applied to polish the lithium niobate wafer.The influences of the polishing slurry configuration parameters such as silica abrasive content,oxidant content,complexing agent content,surfactant content and pH value on the polishing effect were investigated.According to the orthogonal experimental results of material removal rate and surface roughness,the polishing slurry with the optimum composition was obtained.The removal mechanism of lithium niobate wafer was analyzed.Then the experimental results were compared with those of the conventional polishing.The results show that the major influences on the polishing effect of lithium niobate wafer are silica abrasives and oxidants.With a silica abrasive mass fraction of 20%,a hydrogen peroxide mass fraction of 2.5%,a citric acid mass fraction of 1.6%,a pH value of 11 and a polyvinylpyrrolidone mass fraction of 0.4%,the material removal rate is 401.52 nm/min and the surface roughness is 1.04 nm.With the same polishing process parameters,the material removal rate of conventional chemical mechanical polishing(CMP)is 427.68 nm/min and the surface roughness is 1.12 nm.The effect of ultrasonic fine atomization polishing is similar to that of conventional CMP,but the consumed quantity of ultrasonic fine atomization polishing slurry is only 1/7 as much as that of the conventional CMP.

关 键 词：化学机械抛光(CMP) 铌酸锂 精细雾化 抛光液 正交试验 

分 类 号：TN305.2[电子电信—物理电子学]