Dynamics and manipulation of ferroelectric domain walls in bismuth ferrite thin films  

作　　者：Shuyu Xiao Yaming Jin Xiaomei Lu Sang-Wook Cheong Jiangyu Li Yang Li Fengzhen Huang Jinsong Zhu 

机构地区：[1]National Laboratory of Solid State Microstructures and Physics School,Nanjing University,Nanjing 210093,China [2]Collaborative Innovation Center of Advanced Microstructures,Nanjing University,Nanjing 210093,China [3]Rutgers Center for Emergent Materials and Department of Physics and Astronomy,Rutgers University,Piscataway,NJ 08854,USA [4]Shenzhen Key Laboratory of Nanobiomechanics,Shenzhen Institutes of Advanced Technology,Chinese Academy of Sciences,Shenzhen 518055,China [5]Department of Mechanical Engineering,University of Washington,Seattle,W A 98195,USA

出　　处：《National Science Review》2020年第2期278-284,共7页国家科学评论（英文版）

基　　金：supported by the National Key Research Program of China(2016YFA0201004);the State Key Program for Basic Research of China(2015CB921201);the National Natural Science Foundation of China(11874208,51721001,51672123 and 61671235);the Priority Academic Program Development of Jiangsu Higher Education Institutions;supported by the U.S. Department of Energy(DOE)under Grant No.DOE:DE-FG02-07ER46382.

摘　　要：Ferroelectric domain walls differ from domains not only in their crystalline and discrete symmetry,but also in their electronic,magnetic,and mechanical properties.Although domain walls provide a degree of freedom to regulate the physical properties at the nanoscale;the relatively lower controllability prevents their practical applications in nano-devices.In this work;with the advantages of 3D domain configuration detection based on piezoresponse force microscopy;we find that the mobility of three types of domain walls(tail-to-tail,head-to-tail,head-to-head)in(001)BiFeO3 films varies with the applied electrical field.Under low voltages;head-to-tail domain walls are more mobile than other domain walls;while,under high voltages,tail-to-tail domain walls become rather active and possess relatively long average lengths.This is due to the high nucleation energy and relatively low growth energy for charged domain walls.Finally;we demonstrate the manipulation of domain walls through successive electric writings,resulting in well-aligned conduction paths as designed;paving the way for their application in advanced spintronic;memory and communication nano-devices.

关 键 词：domain WALL FERROELECTRIC THIN film PIEZORESPONSE force MICROSCOPY DYNAMICS 

分 类 号：TM27[一般工业技术—材料科学与工程] O469[电气工程—电工理论与新技术]