MgZnO薄膜晶体管在紫外探测中的特性研究  

Studyon Characteristics of MgZnO Thin Film Transistor in Ultraviolet Detection

作　　者：吴昀卓 高晓红[1] 秦大双 曾一明 张耕严 岳廷峰 刘建文 WU Yun-zhuo;GAO Xiao-hong;QIN Da-shuang;ZENG Yi-ming;ZHANG Geng-yan;YUE Ting-feng;LIU Jian-wen(Jilin Jianzhu University,College of Electrical and Computer Engineering,Changchun 130000,China)

机构地区：[1]吉林建筑大学电气与计算机学院,吉林长春130000

出　　处：《电脑知识与技术》2020年第6期252-254,共3页Computer Knowledge and Technology

基　　金：大学生创新创业训练计划项目(201910191059)。

摘　　要：室温下通过磁控溅射的方式在热氧化SiO2的衬底上沉积MgZnO薄膜,研究Mg元素的少量掺杂对薄膜以及器件性能的影响,使用湿法刻蚀的方法制备了MSM结构的器件。器件开关比3.66×106,在入射波长为365nm、254nm的光照下响应度分别达到了3.16A/W、7.74A/W.光暗电流比在101~104之间。通过紫外光分度计测试出薄膜在可见光区域透过率达到90%以上,光学带隙为3.28eV。MgZnO films were deposited on the substrate of thermally oxidized SiO2 by magnetron sputtering at room temperature.The ef fects of a small amount of Mg doping on the properties of the films and devices were investigated.The MSM devices were fabricated by wet etching.The device has a switching ratio of 3.66×106,and the responsivity is 3.16A/W and 7.74A/W under the illumination of 365nm and 254nm respectively.The ratio of light to dark current is between 101 and 104.The transmittance of the film in the visible light region was over 90%and the optical band gap was 3.28 eV.

关 键 词：MgZnO薄膜晶体管 MgZnO薄膜 MSM结构 响应度 光暗电流比 

分 类 号：G642[文化科学—高等教育学]