一款X波段高效率GaN负载调制平衡放大器MMIC  

An X band High Efficiency GaN Load Modulated Balanced Amplifier MMIC

作　　者：王光年 陶洪琪[1] WANG Guangnian;TAO Hongqi(Science and Technology on Monolithic Integrated Circuits and Modules Laboratory,Nanjing Electronic Devices Institute,Nanjing,210016,CHN)

机构地区：[1]南京电子器件研究所,微波毫米波单片集成和模块电路重点实验室,南京210016

出　　处：《固体电子学研究与进展》2020年第1期1-6,共6页Research & Progress of SSE

摘　　要：报道了一款采用0.25μm GaN HEMT工艺的X波段高效率负载调制平衡放大器芯片。该芯片由两个射频端口的90°Lange耦合器,一对平衡功率放大器和一个控制信号功率放大器组成。通过改变同频率处控制信号的幅度与相位去调制平衡功率放大器的阻抗。在连续波测试条件下,该负载调制平衡放大器芯片在8~11 GHz范围内,最大输出功率为42.5 dBm,饱和效率为45%~55%,当输出功率回退6 dB时,效率为40%~45%。An X-band high efficiency GaN load modulated balanced amplifier MMIC utilizing 0.25μm GaN HEMT technology was presented.The chip was composed of two 90°Lange couplers at RF port,a pair of balanced power amplifiers and a control signal power amplifier.The impedance of the balanced power amplifier was modulated by varying the amplitude and phase of the injected control signal at same frequency.The load modulated balanced amplifier MMIC has a peak continuous wave output power of 42.5 dBm,with efficiency of 45%~55%at peak power and 40%~45%at 6 dB out put back-off(OBO)over 8~11 GHz.

关 键 词：负载调制平衡放大器 单片微波集成电路 高效率 幅度控制 相位控制 

分 类 号：TN492[电子电信—微电子学与固体电子学] TN722.7.5