高温ITO薄膜应变计制备及压阻性能  

Fabrication and piezoresistance of high temperature ITO thin film strain gauge

作　　者：杨伸勇 张丛春[1] 杨卓青[1] 李红芳 姚锦元[1] 黄漫国 汪红[1] 丁桂甫[1] YANG Shen-yong;ZHANG Cong-chun;YANG Zhuo-qing;LI Hong-fang;YAO Jin-yuan;HUANG Man-guo;WANG Hong;DING Gui-fu(National Key Laboratory of Science and Technology on Micro/Nano Fabrication,Shanghai Jiao Tong University,Shanghai 200240,China;AVIC Beijing Changcheng Aeronautical Measurement and Control Technology Research Institute,Beijing 101111,China)

机构地区：[1]上海交通大学微米/纳米加工技术国家级重点实验室,上海200240 [2]中国航空工业集团公司北京长城航空测控技术研究所,北京101111

出　　处：《材料工程》2020年第4期145-150,共6页Journal of Materials Engineering

基　　金：上海市非硅微纳集成制造专业技术服务平台项目(17DZ2291400)。

摘　　要：高温薄膜应变计被广泛应用于极端条件热端构件的应变测量。ITO薄膜应变计通常能够应用于1000℃以上的应变测量,为了研究ITO薄膜的显微结构、XPS光谱、阻温特性及压阻响应,采用磁控溅射在陶瓷基底上制备了ITO薄膜应变计,并在高温纯N2中热处理ITO薄膜。结果表明,其电阻温度系数稳定在-750×10-6℃-1,在1200℃下测试其应变特性,测得电阻漂移率为0.0018 h-1,应变因子为16。ITO薄膜在高温下具有稳定的电阻温度系数和低漂移率,为高温端部件应变的测量提供了可能。High temperature thin film strain gauges are widely used in the strain measurement of extreme conditions, especially in the high temperature components. ITO thin film strain gauges can generally be applied to the strain measurements above 1000 ℃. ITO high temperature thin film strain gauge was fabricated on the ceramic substrate using magnetron sputtering, and then was thermal treated at high temperature in pure N2 atmosphere, with the purpose of studying its microstructure, XPS, temperature resistance characteristics and piezoresistive response. The results show that the temperature coefficient of resistance(TCR) of ITO thin film strain gauge can stabilize at-750×10-6 ℃-1. In addition, ITO thin film strain gauge is loaded at 1200 ℃, and the results show that the drift rate is 0.0018 h-1 and the strain factor is 16. Stable TCR and low drift rate of ITO thin film strain gauge provide the possibility for its application in the strain measurement of the hot end components.

关 键 词：ITO薄膜应变计 热处理 高温应变测量 电阻温度系数 

分 类 号：V241.7[航空宇航科学与技术—飞行器设计] TN389[电子电信—物理电子学]