硅片CMP颗粒度的几个影响因素研究  

Study on the Influence of Several Parameters on the Particle of Silicon Wafer after CMP

作　　者：刘永进 LIU Yongjin(Beijing Semicore Microelectronics Equipment Co.,Ltd.,Beijing 100176,China)

机构地区：[1]北京烁科精微电子装备有限公司,北京100176

出　　处：《电子工业专用设备》2020年第2期27-28,68,共3页Equipment for Electronic Products Manufacturing

摘　　要：颗粒度是CMP工艺的重要指标。针对CMP的几个工艺参数进行实验,获得了各参数对硅片CMP后颗粒度的影响。Particle is an important index of CMP(Chemical mechanical polishing)process.In this paper,several process parameters of CMP were tested to obtain the influence of each parameter on the particle of silicon wafer after CMP.

关 键 词：硅片 化学机械抛光(CMP) 颗粒度 

分 类 号：TN305.2[电子电信—物理电子学]