电子束直写曝光机的原理与常见问题分析  

The Principle of Electron Beam Direct Writing Lithography and Analysis of Normal Questions

作　　者：郝晓亮[1] 赵英伟[1] 王秀海[1] 曹健[1] HAO Xiaoliang;ZHAO Yingwei;WANG Xiuhai;CAO Jian(The 13^th Research Institute of CETC,Shijiazhuang 050051,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《电子工业专用设备》2020年第2期48-52,共5页Equipment for Electronic Products Manufacturing

摘　　要：介绍了电子束曝光的分类和特点,阐述了电子束直写曝光的核心部分-电子光柱体的结构、原理以及工作方式;并且介绍了电子束的产生、偏转、曝光过程以及电子束的束斑类型以及扫描方式;分析了影响电子束曝光分辨率的关键参数以及邻近效应对工艺的影响。The classification and characteristics of electron beam lithography are introduced;The structure,principle and working mode of electron beam column-the core part of electron beam direct writing lithography are described in detail.The process of electron beam generation,deflection and lithography,beam spot type and scanning mode of electron beam are also introduced in this paper.The key parameters affecting the resolution of electron beam lithography are analyzed.The proximity effect and its influence on the process are introduced.

关 键 词：电子束直写曝光 邻近效应 光刻工艺 

分 类 号：TN305.7[电子电信—物理电子学]