半导体晶圆ENIG/ENEPIG产品设计考量  

Design Considerations for ENIG/ENEPIG Technological Process on Semiconductor Wafer

作　　者：刘勇 LIU Yong(Millennium Microtech Shanghai Co.,Ltd.,Huatian Tech.Group,Shanghai 201203,China)

机构地区：[1]华天科技集团上海纪元微科电子有限公司,上海201203

出　　处：《电子与封装》2020年第4期46-52,共7页Electronics & Packaging

摘　　要：通过化学自催化反应在半导体晶圆I/O铝或铜金属垫上沉积具有可焊接性的镍金/镍钯金层,此工艺已在MOSFET、IGBT、RFID、SAW Filter等产品上得到广泛应用。着重阐述了在新产品设计和工程评估阶段,对于晶圆产品本身应予以考量的因素,如钝化层种类及厚度,I/O金属垫的成分及结构,切割轨道上金属图形的大小及钝化层的覆盖,不同I/O pad的电势等。其中一些因素导致的问题会直接影响化学镍金/镍钯金后产品的性能应用。在化镀工艺过程中,要充分了解产品本身结构以及可能造成的相应缺陷及问题,并且应综合考虑这些因素的影响。The ENIG/ENEPIG(electroless nickel immersion gold/electroless nickel/palladium immersion gold)process is an autocatalytic chemical reaction,which can deposit a weldable Ni/Au or Ni/Pd/Au layer on semiconductor wafer I/O metal pad(aluminum or copper),and it is widely used in the field of MOSFET,IGBT,RFID,SAW Filter etc.The factors directly related to the function and structure of semiconductor wafer are considered and analyzed,including passivation coverage and its thickness,the composition and structure of I/O metal pad,the features on the dicing street,the potential effect of different I/O pad.These factors will directly impact the quality and function of semiconductor wafers after ENIG/ENEPIG process,and should be considered during product design and engineering evaluation.

关 键 词：半导体晶圆 化学镍金/镍钯金 缺陷分析 产品设计考量 

分 类 号：TQ153.1[化学工程—电化学工业]