硅外延材料制造过程中先进配套条件的研究  

Study on Advanced Supporting Conditions in Production of Silicon Epitaxial Wafers

作　　者：唐发俊 赵扬 李明达[1] 马丽颖 王楠 TANG Fajun;ZHAO Yang;LI Mingda;MA Liying;WANG Nan(46^th Research Institute,China Electronics Technology Group Corporation,Tianjin 300220,China;Tianjin Key Laboratory of Composites and Functional Materials,School of Materials Science and Engineering,Tianjin University,Tianjin 300350,China)

机构地区：[1]中国电子科技集团公司第四十六研究所半导体材料硅外延部,天津300220 [2]天津大学材料科学与工程学院天津市材料复合与功能化重点实验室,天津300350

出　　处：《天津科技》2020年第4期18-19,22,共3页Tianjin Science & Technology

基　　金：天津市自然科学基金“基于连续波激光辐照诱导富硅氧化硅的相变机理研究”(18JCYBJC41800);天津市科技计划项目“特种高频器件用硅外延薄层高阻材料的制备及核心技术基础研究”(18ZXJMTG00300)。

摘　　要：应用于半导体产业的硅外延材料,其制造工艺的发展迄今已将近50年。一方面,为了满足硅外延片从小尺寸向大尺寸发展以及材料均匀性要求的不断提高,其制造设备从多片式外延炉向单片式外延炉发展;另一方面,随着半导体元器件制造对硅外延片的质量如材料洁净度、生产稳定性等方面提出了更高的要求,硅外延材料制造过程中的配套条件也经历了一系列的发展,例如,气体纯化器、起泡器、气体流量补偿器等配套装置的应用,极大改善了硅外延片的质量。通过对气体纯化器、起泡器、气体流量补偿器原理进行介绍,阐述其与硅外延片质量改善的关系。The manufacturing process of silicon epitaxial materials used in the semiconductor industry has a history of 50 years till now.On one hand,in order to meet the continuous development of silicon epitaxial wafers from small to large sizes and the uniformity of materials,its manufacturing equipment has evolved from multi-wafer epitaxial furnace to single wafer epitaxial furnace.On the other hand,as the manufacture of semiconductor components puts forward higher requirements on the quality of silicon epitaxial wafers,such as material cleanliness,production stability and so on,the supporting conditions in the manufacturing process of silicon epitaxial materials have also experienced a series of development.For instance,the application of gas purifier,bubbler and gas flow compensator greatly improves the quality of silicon epitaxial wafers.The principles of gas purifier,bubbler and gas flow compensator are introduced,and the relationship between them and the quality improvement of silicon epitaxial wafer is discussed.

关 键 词：硅外延炉 气体纯化器 起泡器 气体流量补偿器 

分 类 号：TN304.0[电子电信—物理电子学]