12.5μm碲镉汞长波红外探测器暗电流研究  

Study on Dark Current of 12.5μm HgCdTe Long-Wave Infrared Detector

作　　者：祁娇娇 马涛 宁提[1] 王成刚[1] 于小兵[1] QI Jiao-jiao;MA Tao;NING Ti;WANG Cheng-gang;YU Xiao-bing(North China Research Institute of Electro-Optics, Beijing 100015, China)

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《红外》2019年第12期10-14,共5页Infrared

摘　　要：随着红外探测器技术的发展,延长探测器的工作波长成为重要的发展方向之一。由于工作波长随x值的变化而带隙可调,碲镉汞材料得到了广泛应用。随着波长增长,暗电流成为限制红外探测器发展的主要因素。以12.5μm碲镉汞长波红外探测器为例,通过仿真研究了工作温度和固定电荷对其暗电流的影响,并对77 K和60 K下不同种类的暗电流进行了分析。该研究使我们对12.5μm探测器的暗电流具有更深入的了解,为提高12.5μm探测器的制备水平提供了方向。With the development of infrared detector technology, extending the operating wavelength of the detector has become one of the important development directions. Because the operating wavelength of the detector varies with the x value, mercury cadmium telluride(HgCdTe) materials have been widely used. As the operating wavelength increases, dark current becomes a major factor limiting the development of infrared detectors. Taking a 12.5 μm HgCdTe long-wave infrared detector as an example, the effects of operating temperature and fixed charge on its dark current are studied by simulation, and different types of dark currents at 77 K and 60 K are analyzed. This research gives us a deeper understanding of the dark current of 12.5 μm detectors, and provides a direction for improving the preparation level of 12.5 μm detectors.

关 键 词：碲镉汞 红外探测器 暗电流 

分 类 号：TN3[电子电信—物理电子学]