纳米CMOS器件中源/漏串联电阻栅长相关性研究  

Study on the Gate Length Dependence of Source/Drain Series Resistance in Nanoscale CMOS devices

作　　者：马丽娟 李茹 Ma Lijuan;Li Ru(Nanjing Technical Vocational College,Nanjing Jiangsu,210019)

机构地区：[1]南京高等职业技术学校,江苏南京210019

出　　处：《电子测试》2020年第8期30-33,共4页Electronic Test

基　　金：南京市“十三五”教育科学规划课题““3+4”分段模式下以培养计算思维能力为目标的C语言程序设计课程改革研究(L/2018/280)”;江苏省职业教育教学改革研究课题“职业学校STEAM课程促进学生创新能力培养研究(ZYB36)”。

摘　　要：本文利用恒定迁移率、直接Id-Vgs和Y函数三种方法对纳米CMOS器件中提取的源/漏串联电阻(Rsd)与器件栅长(L)相关性进行了研究。结果表明,采用恒迁移率方法得到的Rsd具有与栅长无关的特性,纳米小尺寸CMOS器件的Rsd值在14.3Ω~10.9Ω之间。直接Id-Vgs和Y函数方法都得到了与L相关的Rsd值,误差分析发现从直接Id-Vgs和Y函数两种方法中提取的Rsd对L依赖性与提取过程中的栅极电压导致有效沟道迁移率(μeff)降低有关,推导过程中忽略了这种影响,Rsd值叠加了一个与栅长相关的量。本文计算了这个叠加的误差值,并得到消除此误差值之后各个栅长器件的Rsd值。The dependence on gate length of the source/drain series resistance extracted from nanoscale CMOS devices is studied by constant-mobility method,direct Id-Vgs method and y-function method.The results show that the Rsd obtained by the method of constant-mobility is independent of channel gate length,and the Rsd of nanometer deeply CMOS devices is between 14.3Ωand 10.9Ω.Both the direct Id-Vgs and the y-function methods obtained the gate length dependent Rsd values.Error analysis shows that the dependence of Rsd on gate length extracted from direct Id-Vgs and y-function methods is related to the decrease of effective channel mobility caused by gate voltage in the extraction process,which is ignored in the derivation process.The Rsd value adds a quantity relative to the gate length.In this paper,the error of the superposition is calculated,and the Rsd value of each gate length CMOS devices after eliminating the error value is obtained.

关 键 词：CMOS器件 源/漏串联电阻 栅长 相关性 

分 类 号：TN386[电子电信—物理电子学]