光电化学腐蚀条件对多孔硅阵列的影响  

Effect of Photo-electrochemical Etching Method on Porous Silicon Arrays

作　　者：吴伯涛 曹林洪[1] 周秀文[2] 湛志强[2] WU Bo-tao;CAO Lin-hong;ZHOU Xiu-wen;ZHAN Zhi-qiang(School of Materials Science and Engineering,Southwest University of Science and Technology,Sichuan Mianyang 621900;Research Center of Laser Fusion,China Academy of Engineering Physics,Sichuan Mianyang 621900,China)

机构地区：[1]西南科技大学材料科学与工程学院,四川绵阳621900 [2]中国工程物理研究院激光聚变研究中心,四川绵阳621900

出　　处：《广州化工》2020年第8期45-48,61,共5页GuangZhou Chemical Industry

基　　金：西南科技大学龙山人才科研支持计划(18LZX438)。

摘　　要：采用光电化学腐蚀的方法在腐蚀电压为1.3 V,腐蚀液配比为HF(40%):C2H5OH(99%):H2O=1:7:1(体积比)和卤素灯为光源的条件下获得了结构整齐、孔道均匀的多孔硅阵列。研究表明,随着电压的增大,孔壁侧蚀严重,孔壁有分叉现象;随着HF浓度的增加,制备的多孔硅阵列孔深增加,腐蚀速度增加;光源的不同会导致孔道内部均匀程度的不同。最后得出了最佳的刻蚀参数条件,得到了长径比大于50,孔道结构外壁均匀光滑的多孔硅阵列。The porous silicon array with orderly structure and uniform channels was obtained by photochemical etching with a corrosion voltage of 1.3 V, a corrosion solution ratio of HF(40%):C2H5OH(99%):H2O=1:7:1(volume ratio) and a halogen lamp as the light source. The results showed that with the increase of voltage, the holes wall had serious side erosion and bifurcation. With the increase of HF concentration, the holes depth and corrosion rate of the prepared porous silicon were increased. The different light source will lead to the different degree of uniformity inside the channel. Finally, the optimum etching parameters were obtained, and a porous silicon array with aspect ratio greater than 50 and a uniform and smooth outer wall of the channel structure was obtained.

关 键 词：光电化学腐蚀法 多孔硅阵列 工艺优化 结构规整 

分 类 号：TQ035[化学工程]