中波碲镉汞p-on-n高温工作技术研究  

Study on p-on-n technology of the MWIR HgCdTe for hot work

作　　者：陈慧卿[1] 史春伟[1] 胡尚正[1] 孙海燕[1] 王成刚[1] 孙浩[1] CHEN Hui-qing;SHI Chun-wei;HU Shang-zheng;SUN Hai-yan;WANG Cheng-gang;SUN Hao(North China Research Institute of Electro-Optics,Beijing 100015,China)

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《激光与红外》2020年第4期435-438,共4页Laser & Infrared

摘　　要：针对碲镉汞中波p-on-n技术进行研究,采用二次离子质谱仪分析注入后及退火后As离子在碲镉汞材料中的浓度分布,使用透射电镜表征激活退火后离子注入损伤修复状态,通过半导体参数测试仪评价pn结的IV特性,将探测器芯片装在变温杜瓦中测试其不同温度下的焦平面技术指标。研究结果表明,As离子注入后在碲镉汞体内形成大量缺陷,经过富汞退火后缺陷得到修复,同时As离子进一步向内扩散,制备的pn结工作稳定表明As离子得到有效激活,制备的中波p-on-n探测器芯片在120 K温度下有效像元率可以达到99%以上。In this paper,we report the fabrication of middle-wavelength(MWIR)p-on-n infrared FPA detector in HgCdTe.The arsenic concentration profile determined by Secondary Ion Mass Spectroscopy.The damage induced by arsenic implantation into HgCdTe have been examined by transmission electron microscopy(TEM).The electrical performance of the sample was characterized by the current-voltage curve characteristic.The results show that annealing under Hg overpressure effectively suppresses most of the defects and creates multi-component diffusion.The p-on-n photodiodes showedthe ion-implanted arsenic was activated.The operability.of the middle-wavelength p-on-n infrared FPA detector in HgCdTe achieved 99.19%at 120 K.

关 键 词：碲镉汞 p-on-n As注入 高温工作 

分 类 号：TN213[电子电信—物理电子学]