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作 者:Meng Wu Shanquan Chen Chuanwei Huang Xing Ye Haiping Zhou Xiaochun Huang Kelvin H.L.Zhang Wensheng Yan Lihua Zhang Kisslinger Kim Yingge Du Scott Chambers Jin-Cheng Zheng Hui-Qiong Wang
机构地区:[1]Fujian Provincial Key Laboratory of Semiconductors and Applications,Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices,Department of Physics,Xiamen University,Xiamen 361005,China [2]Shenzhen Key Laboratory of Special Functional Materials,College of Materials Science and Engineering,Shenzhen University,Shenzhen 518060,China [3]School of Materials and Energy,University of Electronic Science and Technology of China,Chengdu 611731,China [4]State Key Laboratory of Physical Chemistry of Solid Surfaces,College of Chemistry and Chemical Engineering,Xiamen University,Xiamen 361005,China [5]National Synchrotron Radiation Laboratory,University of Science and Technology of China,Hefei 230029,China [6]Center for Functional Nanomaterials,Brookhaven National Laboratory,Upton,NY 11973-5000,USA [7]Physical Sciences Division,Physical and Computational Sciences Directorate,Pacific Northwest National Laboratory,Richland,WA 99352,USA
出 处:《Frontiers of physics》2020年第1期43-50,共8页物理学前沿(英文版)
基 金:the valuable discussion with X.P.Yang and the provision of synchrotron radiation at NSRL.This project was funded by National Natural Science foundation of China(Grant No.11704317);China Postdoctoral Science Foundation(Grant No.2016M602064);We also acknowledge the supports by the Natural Science Foundation of Shenzhen University(Grant No.827-000198)。
摘 要:Hydrogenation of transition metal oxides offers a powerful platform to tailor physical functionalities as well as for potential applications in modern electronic technologies.An ideal nondestructive and efficient hydrogen incorporation approach is important for the realistic technological applications.We demonstrate the proton injection on SrCro3 thin films via an efficient low-energy hydrogen plasma implantation experiments,without destroying the original lattice framework.Hydrogen ions accumu-late largely at the interfacial regions with amorphous character which extend about one-third of the total thickness.The Hx.SrCro3(HSCO)thin films appear like exfoliated layers which however retain the fully strained state with distorted perovskite structure.Proton doping induces the change of Cr oxidation state from Cr^4+to Cr^3+in HSCO thin films and a transition from metallic to insulat-ing phase.Our investigations suggest an attractive platform in manipulating the electronic phases in proton-based approaches and may offer a potential peeling off strategy for nanoscale devices through low-energy hydrogen plasma implantation approaches.
关 键 词:TRANSITION metal oxide thin film METAL-INSULATOR TRANSITION HYDROGENATION
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