6.5kV高压全SiC功率MOSFET模块研制  

Fabrication of 6.5kV High-voltage Full SiC Power MOSFET Modules

作　　者：金晓行 李士颜 田丽欣 陈允峰 郝凤斌 柏松[1] 潘艳 JIN Xiaoxing;LI Shiyan;TIAN Lixin;CHEN Yunfeng;HAO Fengbin;BAI Song;PAN Yan(State Key Laboratory of Wide-Bandgap Semiconductor Power Electronic Devices(Nanjing Electronic Device Institute),Nanjing 210016,Jiangsu Province,China;State Key Laboratory of Advanced Power Transmission Technology(Global Energy Interconnection Researcher Institute),Changping District,Beijing 102211,China;Guo Yang Electronics.Co.,Ltd.,Yangzhou 225100,Jiangsu Province,China)

机构地区：[1]宽禁带半导体电力电子国家重点实验室(南京电子器件研究所),江苏省南京市210016 [2]先进输电技术国家重点实验室(全球能源互联网研究院有限公司),北京市昌平区102211 [3]国扬电子有限公司,江苏省扬州市225100

出　　处：《中国电机工程学报》2020年第6期1753-1758,共6页Proceedings of the CSEE

基　　金：国家重点研发计划项目(2016YFB0400502)。

摘　　要：该文报道6.5kV、25A及100A两款全碳化硅(silicon carbide,SiC)功率金属场效应晶体管(metal oxide field-effect transistor,MOSFET)模块制备及测试结果。两款模块所采用的6.5kV SiC MOSFET及SiC肖特基二极管芯片均采用自主研制的高压SiC芯片,充分显示了在SiC材料外延、器件制备及模块封装领域国产化方面的巨大进展。该文报道6.5kV、25A和100A两款模块动静态性能表征结果,并与国际研究报道水平做对比分析。室温下,两款模块导通能力分别大于25A和100A;栅源短接,在漏极电压6.5kV时,模块漏电流分别为2.0μA和8.77μA。对6.5kV、25A模块动态参数、开关波形进行测试,以表征单管芯MOSFET动态性能特性。在工作电压3.6kV、导通电流25A下,对模块进行动态测试,结果表明,SiC MOSFET具有快速的开关特性,其中开通时间(开通损耗)和关断时间(关断损耗)分别为140ns(12.3m J)和84ns(1.31m J)。测试结果表明,研制的全SiC模块具有优越的动静态性能,相对传统硅6.5kV绝缘栅双极晶体管芯片在开关速度及开关损耗方面具有巨大优势,该款6.5kV SiC功率模块在智能电网、电能转换及配电网络领域具有广阔的应用前景。Fabrication and characterization of 6.5 kV,25 A and 100 A full silicon carbide(SiC)power metal oxide field-effect transistor(MOSFET)modules was reported.These SiC MOSFETs and SiC Schottky barrier diodes used in 6.5 kV full SiC Power MOSFET Modules were fabricated by Nanjing Electronic Devices Institute.Great development and progress at SiC exitaxy,devices fabrication and module packaging localization work are fully shown by this report.We compared the dynamic and static characteristics of 6.5 kV,25 A and 100 A Modules.At room temperature,the current handling capability of these two 6.5 k V Si C modules were up to 25 A and 100 A,respectively.With gate electrode shorted,at a drain bias of 6.5 kV,these two modules show a leakage current of 2.0μA and 8.77μA.This show dynamic parameters and switching waveforms of 6.5 kV 25 A modules were tested,to configure the dynamic characteristics of single MOSFET.the power module shows fast switching characteristics with turn-on(turn-on loss)and turn-off(turn-off loss)times of 140 ns(61 mJ)and 84 ns(6.6 m J),respectively,at 3.6 kV supply voltage and 25 A current.Compared to traditional 6.5 kV Si IGBT,this result shows huge advantages on switching speed and switching losses.This advanced module performance demonstrates the ability of using 6.5 kV SiC MOSFET power modules in energy transmission and distribution networks.

关 键 词：碳化硅 碳化硅功率金属场效应晶体管模块 6.5kV 开关时间 开关损耗 

分 类 号：TN325[电子电信—物理电子学]