基于异构集成技术的FBAR开关滤波器组芯片  

FBAR Switched Filter Bank Chip Based on Heterogeneous Integration Technology

作　　者：郭松林 李丽[1] 钱丽勋 王胜福[1] 李宏军[1] Guo Songlin;Li Li;Qian Lixun;Wang Shengfu;Li Hongjun(The 13th Research Institute,CETC,Shijiazhuang 050051,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2020年第4期263-267,共5页Semiconductor Technology

摘　　要：基于异构集成技术,研制了一款各通道中心频率分别为1.5,1.8,1.9和2.0 GHz的四通道高性能开关滤波器组芯片。使用了金锡凸点焊接的组装工艺,与键合线工艺相比,其互连强度更高,寄生参数更小。薄膜体声波谐振器(FBAR)滤波器芯片与微波单片集成电路(MMIC)开关电路芯片采用自主可控的FBAR工艺、 0.35μm GaAs工艺研制。为满足窄带、高矩形度、低插入损耗开关滤波器组的需求,FBAR滤波器电路采用阶梯型拓扑结构。开关电路使用串-并联混合结构,兼顾低插入损耗和高隔离度。经探针台测试结果显示,各通道中心插入损耗小于3 dB,矩形系数比约为2.0,带外抑制大于45 dBc。开关滤波器组芯片面积为4 mm×4 mm,高度约为0.4 mm。Based on the heterogeneous integration technology, a four-channel high-performance switched filter bank chip with the center frequency of 1.5,1.8,1.9 and 2.0 GHz respectively was developed. Compared with the bonding process, Au-Sn bump welding technology was used, its intensity of the interconnection was higher and the parasitic parameters were smaller. The film bulk acoustic resonator(FBAR)filter chip and the monolithic microwave integrated circuit(MMIC)switched circuit chip were developed using the self-controllable FBAR process and 0.35 μm GaAs process. In order to meet the requirements such as narrow bandwidth, high rectangle scoefficient and low insertion loss simultaneously, a ladder-type topology structure were used by the FBAR filter circuit. The switch circuit used the series-shunt compound structure,taking into account both low insertion and high isolation. The results of microwave probe measurements show that the insertion loss at centre frequency of each channel in switched filter band is lower than 3 dB,rectangle coefficient is about 2.0,the rejection in stop-band is more than 45 dBc. The area of the switched filter bank chip is 4 mm×4 mm,the height is about 0.4 mm.

关 键 词：薄膜体声波谐振器(FBAR)滤波器芯片 微波单片集成电路(MMIC) 开关电路 异构集成 开关滤波器组芯片 

分 类 号：TN713[电子电信—电路与系统]