化学液相沉积制备氧化铝薄膜及在TENG中的应用  

Preparation of Aluminum Oxide Thin Films by Chemical Liquid Deposition and Its Application in the TENG

作　　者：阮璐 李典伦 吴朝兴[1] 严子雯 陈桂雄 林金堂[1] 严群 孙捷 Ruan Lu;Li Dianlun;Wu Chaoxing;Yan Ziwen;Chen Guixiong;Lin Jintang;Yan Qun;Sun Jie(College of Physics and Information Engineering,Fuzhou University,Fuzhou 350108,China)

机构地区：[1]福州大学物理与信息工程学院,福州350108

出　　处：《半导体技术》2020年第4期304-311,共8页Semiconductor Technology

基　　金：国家自然科学基金面上项目(11674016);国家重点基础研究发展计划资助项目(2017YFB0403102)。

摘　　要：采用化学液相沉积(CLD)法在氧化铟锡(ITO)导电玻璃和硅基板表面制备了大面积的氧化铝(Al2O3)薄膜,并以非腐蚀的方式在硅片表面使用CLD法直接生长图案化Al2O3薄膜。Al2O3薄膜的表面均匀、连续,生长2 h后膜厚度约为20~30 nm。薄膜的电绝缘性能良好,平均击穿场强达到1.74 MV/cm,可以用作半导体器件的绝缘层。进一步将CLD法制备的Al2O3薄膜用作摩擦电纳米发电机(TENG)中的电子阻挡层,其开路电压和短路电流约为120 V和5μA,分别是不含Al2O3 TENG的1.6倍和2倍。该薄膜不受摩擦层磨损的影响,可以有效地改善TENG性能。结果表明,CLD法可作为一种在室温下、低成本、无毒且简便的新方法,用于半导体器件中绝缘或钝化薄膜的制备。Large area aluminum oxide(Al2O3)thin films were prepared on the surface of indium-tin oxide(ITO) coated conductive glass substrates and Si substrates by the chemical liquid deposition(CLD) method. A patterned Al2O3 thin film was directly prepared on the surface of silicon wafer in a non-etching way with the CLD method. The surface of the Al2O3 thin film is uniform and continuous, and the thin film thickness is 20~30 nm after growing for 2 h. The electrical insulation properties of the thin film are good, and the average breakdown field strength reached is about 1.74 MV/cm, which be used as an insulation layer in semiconductor devices. It was further proposed to use the Al2O3 thin film prepared with the CLD method as an electron blocking layer in a triboelectric nanogenerator(TENG). Its open circuit voltage and short circuit current are about 120 V and 5 μA, respectively, which are 16 times and 2 times higher than those of the TENG without an Al2O3 layer. This Al2O3 thin film was not affected by the wear of the friction layer and effectively improve the performance of the TENG. The results indicate that the CLD method can serve as a low cost, nontoxic and facile new technique at room temperature for the preparation of insulation or passivation thin films in semiconductor devices.

关 键 词：氧化铝(Al2O3) 化学液相沉积(CLD) 绝缘薄膜 摩擦纳米发电机(TENG) 半导体器件 

分 类 号：TN304.055[电子电信—物理电子学]