高品质6英寸N型4H-SiC单晶生长研究  

Study on the Growth of High Quality 6-Inch N-type 4H-SiC Single Crystal

作　　者：刘兵 蒲红斌[1,3] 赵然 赵子强 鲍慧强 李龙远 李晋 刘素娟 LIU Bing;PU Hongbin;ZHAO Ran;ZHAO Ziqiang;BAO Huiqiang;LI Longyuan;LI Jin;LIU Sujuan(School of Automation and Information Engineering,Xi’an University of Technology,Xi’an 710048,China;Cisri-Zhongke Energy Conservation and Technology Co.Ltd,Beijing 100081,China;Xi’an Key Laboratory of Power Electronic Devices and High Efficiency Power Conversion,Xi’an 710048,China)

机构地区：[1]西安理工大学自动化与信息工程学院,西安710048 [2]中科钢研节能科技有限公司,北京100081 [3]西安市电力电子器件与高效电能变换重点实验室,西安710048

出　　处：《人工晶体学报》2020年第4期570-575,共6页Journal of Synthetic Crystals

基　　金：陕西省重点研发计划项目(2018ZDXM-GY-003)。

摘　　要：PVT法生长SiC单晶生长腔的温场分布是影响晶体质量的重要因素。采用数值模拟研究了保温层和坩埚结构以及线圈位置对6英寸SiC晶体生长温场的影响,优化出了适合高品质6英寸SiC晶体生长温场分布,在此条件下生长无裂纹的6英寸N型4H-SiC晶体。用高分辨率X射线衍射、拉曼光谱和缺陷检测系统对所加工的SiC衬底片的质量进行了表征。测试结果表明,晶型为单一的4H-SiC,微管密度小于1 cm^-2,电阻率范围为0.02~0.022Ω·cm,X射线摇摆曲线半高宽为21.6″。The temperature distribution of SiC single crystal growth cavity in PVT method is an important factor affecting the crystal quality.The effects of insulation structure,crucible structure and coil position on the growth temperature field of 6-inch SiC crystal were investigated by numerical simulation.The temperature distribution suitable for high-quality 6-inch SiC crystal growth is optimized.The 6-inch SiC crystal without cracks is successfully obtained through this temperature field.Also,the quality of the SiC wafer was characterized by high resolution X-ray diffraction,Raman spectroscopy and defect detection system.The results show that the crystal is single 4 H-SiC,the micropipe density is less than 1 cm^-2,the resistivity range is 0.02-0.022Ω·cm,and the full width at half maximum of X-ray rocking curve is 21.6″.

关 键 词：PVT法 6英寸N型4H-SiC 数值模拟 温场分布 晶体品质 

分 类 号：TN304.2[电子电信—物理电子学] O782[理学—晶体学]