p型GaSb窗口层在热光伏电池中的应用研究  

Study on the Application of p-type GaSb Window Layer in Thermophotovoltaic Cells

作　　者：靳果[1,2] 朱清智 JIN Guo;ZHU Qingzhi(College of Mechanical and Electrical Automation,Henan Polytechnic Institute,Nanyang 473000,China;Northwest University,Xi’an 710069,China)

机构地区：[1]河南工业职业技术学院机电自动化学院,南阳473000 [2]西北大学,西安710069

出　　处：《人工晶体学报》2020年第4期638-645,共8页Journal of Synthetic Crystals

基　　金：国家自然科学基金(51275084);2019年南阳市科技计划项目(KJGG078)。

摘　　要：为了提高GaSb热光伏电池的转换效率,在电池结构中引入p^+-GaSb窗口层,研究了生长基底、衬底温度和反应物源温度对p^+-GaSb薄膜性能的影响,并优化了电池结构中p^+-GaSb窗口层的厚度和掺杂浓度。实验结果表明,生长基底和温度等制备参数影响着p^+-GaSb薄膜的结构特性和电学特性,而且,较薄的高掺杂p^+-GaSb层有利于提高电池性能。通过测试和仿真,热光伏电池的转换效率达到9.49%(AM1.5测试)和20.34%(AFORS-HET仿真)。In order to improve the conversion efficiency of GaSb thermophotovoltaic cells,p^+-GaSb window layer was introduced into the cell structure.The effects of bases,substrate temperature and reactant source temperature on the properties of p^+-GaSb films were studied,the thickness and doping concentration of p^+-GaSb window layer in the cells were optimized.The experimental results show that the structure and electrical properties of p^+-GaSb films are affected by the bases and temperatures,and the performance of the cells can be improved significantly with thin and high doping p^+-GaSb layers.Through the measurement and simulation,the conversion efficiencies of the thermophotovoltaic cells reaches 9.49%(AM1.5 measurement)and 20.34%(AFORS-HET simulation).

关 键 词：生长基底 衬底温度 厚度 掺杂浓度 AM1.5测试 AFORS-HET仿真 

分 类 号：TN304.05[电子电信—物理电子学]