硅基异质集成技术发展趋势与进展  

Trends of Silicon-Based Heterogeneous Integration Technologies

作　　者：武俊齐[1] 赖凡[1] WU Junqi;LAI Fan(The 24th Research Institute of China Electronics Technology Group Corporation,Chongqing 400060,P.R.China)

机构地区：[1]中国电子科技集团公司第二十四研究所,重庆400060

出　　处：《微电子学》2020年第2期214-218,共5页Microelectronics

基　　金：模拟集成电路国家重点实验室基金资助项目(614280205030517)。

摘　　要：目前主流的异质集成技术有单片异质外延生长、外延层转移和小芯片微米级组装。硅基异质集成主要是指以硅材料为衬底集成异质材料(器件)所形成的集成电路技术。它首先在军用微电子研究中得到重视,并逐渐在民用领域扩展。硅基异质集成技术正处于芯片级集成向晶体管级集成的发展初期,已有关于晶体管级和亚晶体管级集成的报道。本文重点研究了单片三维集成电路(3D SoC)、太赫兹SiGe HBT器件、超高速光互连封装级系统(SiP)、单片集成电磁微系统等硅基异质集成技术前沿,展现了硅基异质集成技术的发展趋势,及其在军用和民用通信、智能传感技术发展中所具有的重要意义。The current mainstream heterogeneous integration technologies include monolithic hetero-epitaxial growth, epitaxial layer transfer and microchip-level assembly. Silicon-based heterogeneous integration mainly refers to the integrated circuit technology formed by integrating heterogeneous materials(devices) with a silicon material as a substrate. It has first gained attention in military microelectronics research, and gradually expanded in the civilian field. Silicon-based heterogeneous integration technology is in the early stages from chip-level integration to transistor-level integration. There have been reports on transistor-level and sub-transistor-level integration. This article focused on the frontiers of silicon-based heterogeneous integration technologies such as monolithic three-dimensional integrated circuits(3 D SoCs), terahertz SiGe HBT devices, ultra-high-speed optical interconnect package-level systems(SiP), and monolithic integrated electromagnetic microsystems. It showed the development trend of silicon-based heterogeneous integration technology and its significance in the development of military and civilian communications and intelligent sensing technology.

关 键 词：硅基异质集成 3D SoC 光互连SiP 太赫兹SiGe HBT器件 电磁微系统 

分 类 号：TN405[电子电信—微电子学与固体电子学]