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作 者:束月 梁华国[1] 左小寒 杨兆 蒋翠云[2] 倪天明 SHU Yue;LIANG Huaguo;ZUO Xiaohan;YANG Zhao;JIANG Cuiyun;NI Tianming(School of Electronic Science and Applied Physics,Hefei University of Technology,Hefei 230009,P.R.China;School of Mathematics,HefeiUniversity of Technology,Hefei 230009,P.R.China;College of Electrical Engineering,Anhui Polytechnic University,Wuhu,Anhui241000,P.R.China;KeyLab.of Advan.Perception and Intelligent Control of High-End Equip.,Ministry of Education,Wuhu,Anhui 241000,P.R.China)
机构地区:[1]合肥工业大学电子科学与应用物理学院,合肥230009 [2]合肥工业大学数学学院,合肥230009 [3]安徽工程大学电气工程学院,安徽芜湖241000 [4]高端装备先进感知与智能控制教育部重点实验室,安徽芜湖241000
出 处:《微电子学》2020年第2期241-247,252,共8页Microelectronics
基 金:国家自然科学基金重点项目(61674048,61834006);安徽工程大学启动基金(2018YQQ007);电子测试技术重点实验室开放基金资助项目(61420010202717);安徽省自然科学基金(1908085QF272)。
摘 要:硅通孔(TSV)在制造过程中容易产生各类故障缺陷,导致3D芯片合格率降低。为了解决这一问题,提出一种新的对角线六边形冗余结构,对均匀故障的修复率保持在99%以上,对聚簇故障的修复率与路由冗余结构相近,并高于环形冗余结构。实验结果表明,与环形和路由冗余结构相比,该结构的面积开销分别减小了1.64%和72.99%,修复路径长度分别降低了39.4%和30.81%;与路由结构相比,该结构的时间开销缩短了62.55%。Vertical interconnection of 3 D chips via through-silicon via(TSV) was considered to be a great boost to the semiconductor industry, but TSV was prone to various kinds of faults during manufacturing, which led to the reduction of the yield of 3 D chips. To solve this problem, a novel diagonal hexagonal redundancy structure was proposed to repair the TSV fault. The experimental results showed that the repair rate for uniform faults was always above 99%, while the repair rate for clustered fault was similar to that of router-based structure and higher than that of ring-based structure. In addition, the area overhead was reduced by 1.64% and 72.99% compared with that of the ring-based and router-based structure, respectively. In terms of time overhead, this structure was shortened by 62.55% compared with the router-based structure. The repair path length of this structure was 30.81% and 39.4% lower than that of router-based and ring-based structure, respectively.
分 类 号:TN403[电子电信—微电子学与固体电子学] TN406
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