刻蚀条件对石英各向异性刻蚀特征的作用机理及KMC数值模拟  

Effect of etching conditions on anisotropic etch rates of quartz and KMC simulation

作　　者：张辉[1,2] 满青珊[1] 贲伟[1] 鲁士仿[1] 秦晅[1] 幸研[2] ZHANG Hui;MAN Qingshan;BEN Wei;LU Shifang;QIN Xuan;XING Yan(28th Research Institute of China Electronics Technology Group Corporation, Nanjing, Jiangsu 210007, China;School of Mechanical Engineering, Southeast University, Nanjing, Jiangsu 211189, China)

机构地区：[1]中国电子科技集团公司第二十八研究所,江苏南京210007 [2]东南大学机械工程学院,江苏南京211189

出　　处：《江苏大学学报（自然科学版）》2020年第2期221-229,共9页Journal of Jiangsu University：Natural Science Edition

摘　　要：针对石英晶体各向异性湿法刻蚀复杂的各向异性刻蚀特性,致使刻蚀演化过程和结果难以预测和控制,利用刻蚀半球法得到了石英在多种体积比刻蚀溶液中和不同温度条件下的全晶面刻蚀速率,分析了刻蚀条件的改变对于石英刻蚀各向异性特征的影响作用,并从晶面活化能角度解释了刻蚀各向异性的成因.在形貌预测方面,通过对石英晶体x轴(电轴)和y轴(机械轴)上主要晶面原子排列和速率特征的分析,建立了以基于石英的移除概率函数(QUARTZ-RPF)方程为刻蚀依据的KMC仿真模型,实现了对不同刻蚀条件下的全晶面刻蚀速率及Z-cut切型晶片任意掩膜下刻蚀结构和表面形貌的精确模拟.The complex anisotropic etching characteristics of the anisotropic wet etching for quartz make it difficult to predict and control the evolution process and the etching results.By etching hemispherical method,the effects of concentration and temperature of solution on anisotropic etch rates of quartz were investigated.Based on the activation energy,the cause of anisotropic etching characteristics was analyzed in detail.In morphology prediction,according to the particular atomic arrangements and the facet specific etch rates of several crystal planes parallel to the electric x and mechanical y axes,the KMC etching process model was established based on a suitable quartz-based removal probability function(QUARTZ-RPF).The prediction of the etch rates at wide range of crystallographic facets is successfully realized,and the three-dimensional microstructures and topography etched on Z-cut substrate with arbitrary mask patterns are accurately simulated.

关 键 词：石英 各向异性 湿法刻蚀 活化能 KMC仿真模型 

分 类 号：TP319[自动化与计算机技术—计算机软件与理论]