低功耗高性能的全MOS电压基准源设计  

Design of Full MOS Voltage Reference with Low Power Consumption and High Performance

作　　者：仲召扬 李严[1] ZHONG Zhaoyang;LI Yan(School of Applied Science,Beijing Information Science and Technology University,Beijing 100192,China)

机构地区：[1]北京信息科技大学理学院,北京100192

出　　处：《微处理机》2020年第3期1-4,共4页Microprocessors

基　　金：北京信息科技大学教改项目(2020JGYB41)。

摘　　要：设计了一种基于亚阈值技术的全MOS电压基准源,采用共源共栅结构来增大PSRR,使用MOS管代替电阻,优化温度特性,使电路中大部分MOS管工作于亚阈值区。基于0.18μm CMOS工艺进行设计、版图绘制、和前、后仿真,在后仿真中得出相关参数值。对各参数做出详细分析,包括:一定温度范围内的温度系数;常温下基准输出电压;不同电源电压条件下的线性调整率、基准源静态电流及功耗,并对不同频率下的电源电压抑制比进行了对比。实验结果表明达到了低功耗高性能的设计目标。A full MOS voltage reference based on subthreshold technology is designed.Common source and common gate structure are used to increase PSRR.MOS devices are used instead of resistors to optimize temperature characteristics,so that most MOS in the circuit work in subthreshold region.Based on 0.18μm CMOS process,design,layout drawing,front and back simulation are carried out,and relevant parameter values are obtained in the back simulation.Detailed analysis is made on each parameter,including:temperature coefficient within a certain temperature range,reference output voltage at normal temperature,linear regulation rate,reference quiescent current and power consumption under different power supply voltages,and power supply voltage rejection ratio under different frequencies are compared.The experimental results show that the design goal of low power consumption and high performance has been achieved.

关 键 词：亚阈值 全MOS 电压基准源 低功耗 

分 类 号：TN432[电子电信—微电子学与固体电子学]