薄膜铂电阻元件稳定性测试与分析  

Stability Test and Analysis of Thin Film Platinum Resistance Component

作　　者：何迎辉 龙悦 何峰 江方何 HE Yinghui;LONG Yue;HE Feng;JIANG Fanghe(The 48th Research Institute of China Electronics Technology Group Corporation,Changsha 410111,China;Film Sensing Technology Key Laboratory of Defense Science and Technology in Hu'nan Province,Changsha 410111,China)

机构地区：[1]中国电子科技集团公司第四十八研究所,长沙410111 [2]薄膜传感技术湖南省国防科技重点实验室,长沙410111

出　　处：《微处理机》2020年第3期14-16,共3页Microprocessors

摘　　要：高端军事应用环境对测温传感器提出了小结构、高精度、良好的长期稳定性等要求,采用溅射方式制备的薄膜铂电阻元件成为了首选。通过分析薄膜铂电阻元件的结构、工艺,探讨影响稳定性的主要因素,包括薄膜缺陷、杂质、电迁移、结构封装应用与温度应力等。选择薄膜铂电阻在水三相点下的电阻值作为稳定性的比较基准,设计了一款不大于3mK的高精度测试系统。通过对薄膜铂电阻元件进行高温电寿命试验和温度冲击试验,评估得出薄膜铂电阻元件长期稳定性达到10mK,满足设计需求。The high-end military application environment requires small structure, high precision and good long-term stability of temperature sensors. Thin-film platinum resistance components prepared by sputtering have become the first choice. By analyzing the structure and technology of thin film platinum resistance components, the main factors affecting the stability are discussed, including thin film defects,impurities, electromigration, structure packaging application and temperature stress, etc. The resistance value of the thin film platinum resistor at the three-phase point of water is selected as the reference for stability comparison, and a high-precision testing system of not more than 3 mK is designed. Through the high temperature electrical life test and temperature impact test of the thin film platinum resistance component, the long-term stability of the thin film platinum resistance component is evaluated to reach10 mK, which meets the design requirements.

关 键 词：薄膜铂电阻 稳定性 水三相点 

分 类 号：TM544[电气工程—电器]