锑化铟红外焦平面器件信号分层问题研究  

Study on Signal Layering of InSb Infrared Focal Plane Arrays

作　　者：温涛[1] 龚志红 邱国臣 亢喆[1] WEN Tao;GONG Zhi-hong;QIU Guo-chen;KANG Zhe(North China Research Institute of Electro-Optics, Beijing 100015, China;The Seventh Military Representative Of fice of Air Force in Beijing Area, Beijing 100015, China)

机构地区：[1]华北光电技术研究所,北京100015 [2]空军装备部驻北京地区第七军事代表室,北京100015

出　　处：《红外》2020年第1期11-14,共4页Infrared

摘　　要：锑化铟红外焦平面器件在杜瓦测试中常常会出现信号分层问题,由此影响器件制造的成品率。通过对器件杜瓦测试电平图、管芯电流电压测试结果及衬底掺杂浓度进行研究,找到了导致探测器信号分层的原因。进一步的理论分析表明,锑化铟衬底上局部的高浓度掺杂区域会对器件性能造成影响。基于此研究,在芯片的制备过程中可采取相应的措施,最大限度地避免后道工序中的无效工作,从而提高锑化铟焦平面器件工艺线的流片效率。The problem of signal layering often occurs in Dewar testing of InSb infrared focal plane arrays(IRFPA)detector,affecting the yield of device manufacturing.The cause of the detector signal layering was found by testing the level graph of the Dewar,I--V curve and the substrate doping concentration.Further theoretical analysis also shows that local high-concentration doped regions on the indium antimonide substrate will affect device performance.Based on this research,we can take corresponding measures during the preparation of the chip to minimize the ineffective work in the subsequent processes and improve the tape-out efficiency of the indium antimonide focal plane device process line.

关 键 词：锑化铟 红外焦平面探测器 信号分层 

分 类 号：TN215[电子电信—物理电子学]