硅烷流量对热丝CVD制备多晶硅薄膜的结构及性质影响  

Effect of SiH 4 Flow Rates on Structures and Properties of Poly-Crystalline Silicon Thin Films Deposited by Hot Wire CVD

作　　者：田燕赛 周炳卿[1,2] 张林睿 TIAN Yan-sai;ZHOU Bing-qing;ZHANG Lin-rui(College of Physics and Electronic Information,Inner Mongolia Normal University,Hohhot 010022,China;Key Laboratory of Physics and Chemistry for Functional Material,Hohhot 010022,China)

机构地区：[1]内蒙古师范大学物理与电子信息学院,内蒙古呼和浩特010022 [2]内蒙古自治区功能材料物理与化学重点实验室,内蒙古呼和浩特010022

出　　处：《内蒙古工业大学学报（自然科学版）》2020年第1期15-22,共8页Journal of Inner Mongolia University of Technology：Natural Science Edition

基　　金：国家自然科学基金项目(51262022,21663018)。

摘　　要：采用热丝化学气相沉积法(HWCVD),以高纯SiH 4、H 2作为反应气源,N型(100)的单晶硅片和Corning 7059玻璃片作为衬底来制备多晶硅薄膜材料.在优化了其它沉积参数条件下,研究硅烷流量对多晶硅薄膜的结构及性质的影响.通过X射线衍射谱(XRD)、拉曼光谱仪(Raman)、紫外-可见光透射谱(UV-Vis)、傅里叶变换红外吸收谱(FTIR)和扫描电镜(SEM)分别对薄膜的晶粒大小、结晶取向、带隙宽度、Si-Si键的键合特性及表面形貌进行表征与分析.实验结果表明:在1600℃的热丝温度条件下,硅片衬底上沉积的多晶硅薄膜在(111)面生长存在择优取向.随着硅烷流量的增加,硅片衬底上沉积的薄膜样品晶粒尺寸减小,氧含量降低,玻璃衬底上制备的薄膜样品光学带隙出现了展宽.相对其他薄膜,在硅烷流量为1.02 sccm时,硅片衬底沉积的薄膜得到了较好的沉积速率(0.239 nm/s),样品的晶粒尺寸得到优化.同时在硅烷流量为1.02 sccm时,玻璃衬底上带隙也得到了一定的优化.Poly-crystalline silicon thin films were deposited on N-type(100)mono-crystalline silicon and Corning 7059 glass substrates by hot-wire chemical vapor deposition(HWCVD)using SiH 4 and H 2 as reaction gas source.The effects of silane flow rates on the structure and properties of poly-crystalline silicon films were studied under the conditions of optimizing other deposition parameters.The crystalline grain size,crystal orientation,band gap width,Si-Si bond bonding properties and surface morphology of the films were characterized and analyzed by X-ray diffraction(XRD),Raman scattering spectrum(Raman),ultraviolet-visible transmission spectroscopy(UV-Vis),Fourier transform infrared absorption spectroscopy(FTIR)and Scanning electron microscopy(SEM)respectively.The experimental results show that the poly-crystalline silicon film deposited on the silicon substrate has a preferred orientation for growth on the(111)plane under the condition of hot wire temperature of 1600℃.With the increase of the silane flow,the grain size and the oxygen content of the thin film sample decreases on the silicon substrate,and the band gap of the thin film sample broadens on the glass substrate.Compared with other films,a better deposition rate(0.239 nm/s)on the silicon substrate is obtained at a silane flow rate of 1.02 sccm,and the grain size of the sample can also be optimized.The band gap on the glass substrate is also optimized at a silane flow rate of 1.02 sccm.

关 键 词：热丝化学气相沉积法 多晶硅薄膜 硅烷流量 

分 类 号：O484[理学—固体物理]