驱动电阻对SiC MOSFET开关行为的调控规律  

Regulation Law of Drive Resistance on SiC MOSFET Switching Behavior

作　　者：刘博 刁利军[1] 顾诚博 李伟杰 LIU Bo;DIAO Li-jun;GU Cheng-bo;LI Wei-jie(Beijing Jiaotong University,Beijing 100044,China)

机构地区：[1]北京交通大学,电气工程学院,北京100044

出　　处：《电力电子技术》2020年第3期123-126,共4页Power Electronics

基　　金：北京市科委项目(Z181100004418005)。

摘　　要：针对碳化硅(SiC)金属-氧化物半导体场效应晶体管(MOSFET)驱动电阻的选择问题,建立开关瞬态电路模型。通过数学推导定性分析,确立了受驱动电阻影响的SiC MOSFET开关行为主要特征。在此基础上,搭建双脉冲测试实验平台,将驱动电阻与振荡、超调、损耗和温升之间的关系进行定量分析。通过将器件非理想特性对驱动电阻的敏感度进行归一化处理,归纳出驱动电阻对SiC MOSFET特性的调控规律,从而指导SiC MOSFET栅极驱动回路的优化设计。A switching transient circuit model is established for the selection of the driving resistance of silicon carbide(SiC)metal-oxide-semiconductor field-effect transistor(MOSFET).Through mathematical derivation qualitative analysis,the main characteristics of SiC MOSFET switching behavior affected by driving resistance are established.On this basis,a double-pulse test experimental platform is built to quantitatively analyze the relationship between driving resistance and oscillation,overshoot,loss and temperature rise.By normalizing the sensitivity of the non-ideal characteristics of the device to the driving resistance,the regulation law of the driving resistance to the characteristics of the SiC MOSFET is summarized,which can guide the optimal design of the gate driving loop of the SiC MOSFET.

关 键 词：金属-氧化物半导体场效应晶体管 驱动电阻 开关行为 调控规律 

分 类 号：TN32[电子电信—物理电子学]