牵引级3300 V/1500 A功率IGBT模块开通失效研究  

Study of Turn-on Failure of 3300 V/1500 A Power IGBT Modules in Traction Application

作　　者：张泉 蒋华平 王彦刚 吴煜东 ZHANG Quan;JIANG Hua-ping;WANG Yan-gang;WU Yu-dong(Stale Key Laboratory of Advanced Power Semiconductor Devices,Zhuzhou 412001,China;不详)

机构地区：[1]新型功率半导体器件国家重点实验室,湖南株洲412001 [2]株洲中车时代电气股份有限公司,湖南株洲412001

出　　处：《电力电子技术》2020年第4期128-131,共4页Power Electronics

摘　　要：牵引级3300 V/1500 A功率绝缘栅双极型晶体管(IGBT)模块在斩波试验中存在快恢复二极管(FRD)损毁的失效现象,失效波形显示FRD经过反向电流的峰值之后发生损毁失效。从IGBT和FRD的斩波试验工作原理入手,探讨了FRD损毁失效的原因及失效机理,通过系列试验重点研究了IGBT栅极开通电阻和增益对IGBT开通过程及FRD反向恢复特性的影响。试验发现IGBT栅极开通电阻和增益对开通电流上升率有显著的影响,减小IGBT栅极开通电阻或者增大增益可以降低IGBT的开通损耗,但会增大IGBT的开通电流上升率,进而增大FRD反向恢复峰值电流和峰值功率,导致FRD承受更高的电应力。增益随IGBT器件结构改变而变化,因此当改变IGBT的器件结构导致增益发生变化时,必须谨慎选择IGBT栅极开通电阻,如果IGBT开通电流上升率过大,容易造成FRD的反向恢复工作曲线超出其反向偏置安全工作区(RBSOA)而引发动态雪崩,最终导致FRD产生热击穿而损毁失效。It is found that the fast recovery diode(FRD) are fatally failed during the chopping test on a traction qualified 3 300 V/1 500 V power insulated gate bipolar transistor(IGBT) module with the failure are usually observed after the reverse peak current on the waveform.The chopping test principles of IGBT and FRD are studied in details in order to investigate the FRD failure mechanism.A series of chopping tests are carried out for analysing the effects of IGBT gate turn-on resistance and gain on IGBT turn-on and FRD reverse recovery characteristics.It is concluded that the IGBT turn-on gate resistance and gain affect significantly the rising rate of turn-on current,and a smaller IGBT gate turn-on resistance or a higher gain could be beneficial to the reduction of turn-on power loss,but result in increase of the turn-on current rising rate.So the FRD reverse recovery current and the peak power will increase accordingly,which can bring more electrical stresses to FRD.Gain will vary with change of IGBT structure,so the IGBT gate turn-on resistance should selected carefully to meet the gain change because of different IGBT structure,and to avoid the high current rising rate.Otherwise,the FRD reverse recovery curve will be beyond the reverse bias safe operating area(RBSOA) and resulting in a fatal failure because of thermal runaway.

关 键 词：绝缘栅双极型晶体管 快恢复二极管 失效 

分 类 号：TN32[电子电信—物理电子学]