半导体激光器辐照损伤效应实验研究进展  

Research Progresses of Radiation Damage Experiments in Laser Diodes

作　　者：王祖军 宁浩 薛院院 徐瑞 焦仟丽 刘敏波 姚志斌 马武英 盛江坤 董观涛 WANG Zujun;NING Hao;XUE Yuanyuan;XU Rui;JIAO Qianli;LIU Minbo;YAO Zhibin;MA Wuying;SHENG Jiangkun;DONG Guantao(State Key Laboratory of Intense Pulsed Radiation Simulation and Effect,Northwest Institute of Nuclear Technology,Xi'an 710024,CHN;School of Materials Science and Engineering,Xiangtan University,Xiangtan 411105,CHN)

机构地区：[1]西北核技术研究院强脉冲辐射环境模拟与效应国家重点实验室,西安710024 [2]湘潭大学材料科学与工程学院,湖南湘潭411105

出　　处：《半导体光电》2020年第2期151-158,共8页Semiconductor Optoelectronics

基　　金：国家自然科学基金项目(11875223,11805155);中国科学院战略性先导科技专项项目(XDA15015000);国家重点实验室基金项目(SKLIPR1803,1903Z);抗辐照应用技术创新基金项目(KFZC2018040201).

摘　　要：半导体激光器(LD)工作在空间辐射或核辐射环境中时,会受到辐照损伤的影响而导致器件性能退化。文章回顾了不同时期研制的LD(从早期的GaAs LD到量子阱LD和量子点LD)在辐照效应实验方面的研究进展,梳理了国际上开展不同辐射粒子或射线(质子、中子、电子、伽马射线)诱发LD辐射敏感参数退化的实验规律,分析总结了当前LD辐照效应实验方法研究中亟待解决的关键技术问题,为今后深入开展LD的辐照效应实验方法、退化规律、损伤机理及抗辐射加固技术研究提供理论指导和实验技术支持。Laser diodes(LDs)applied in the space or nuclear radiation environments will be susceptible to the radiation damage,which induces the degradation of the LD performances.In this paper,the radiation experiment progresses of the LDs manufactured at different periods such as the GaAs LDs at forpart,the quantum well LDs,and the quantum dot LDs are reviewed.The degradations of the LD radiation parameters induced by different particles or rays such as protons,neutrons,electrons,and gamma rays are briefly introduced.The key problems needing to be further resolved in the future are analyzed.This paper will provide the basis of the theories and experimental techniques for the investigations of radiation experiment methods,degradation,damage mechanisms,and adiation hardening of the LDs.

关 键 词：半导体激光器 辐照损伤 总剂量效应 位移效应 阈值电流 斜率效率 

分 类 号：TN386.5[电子电信—物理电子学] O605[理学—化学]