一种用于光时域反射仪的1550nm半导体激光器  

Study on 1550nm Semiconductor Lasers Used in OTDR

作　　者：廖柯[1] 王昊璇 熊文涛 陈健 周勇[1] 田坤[1] LIAO Ke;WANG Haoxuan;XIONG Wentao;CHEN Jian;ZHOU Yong;TIAN Kun(Chongqing Optoelectronics Research Institute,Chongqing 400060,CHN)

机构地区：[1]重庆光电技术研究所,重庆400060

出　　处：《半导体光电》2020年第2期159-163,共5页Semiconductor Optoelectronics

摘　　要：光时域反射仪(OTDR)是通信链路中光纤特性测试的专用仪器,半导体激光器是OTDR的关键元器件,激光器的性能直接影响OTDR的测试距离、测试精度等。为适应OTDR的应用需求,提出并研制了一种非对称分别限制(SCH)激光器,SCH结构可有效提高激光器的输出功率和斜率效率。同时,采用应变多量子阱结构来提高器件的温度特性。研制的1 550nm±20nm工作波长的激光器,其单模尾纤输出功率大于等于60mW(工作电流300mA,25℃),激光器上升/下降时间小于1ns,完全满足OTDR长距离、高精度测试的使用要求。The optical time domain reflectometer(OTDR)is a special instrument in the test of optical fiber communication link.As the key compoment of OTDR,the performance of semiconductor laser directly influences the characteristics of OTDR,such as test distance,test precision,etc.In order to meet the application requirements of OTDR,a kind of ridged waveguide laser chip with separate confinement heterostructure(SCH)was proposed.The SCH can improve the output power and slope efficiency of the lasers.Meanwhile,the quantum well structure was adopted to improve the temperature characteristic. For the developed semiconductor lasers working at the wavelength of 1 550 nm±20 nm,the output efficiency of the single mode fiber exceeds 60 mW at the working current of 300 mA under 25℃,and the rise/fall time is less than 1 ns,meeting the requirements of long-distence and high precision in OTDR applications.

关 键 词：半导体激光器 光时域反射仪 工作波长 输出功率 光谱宽度 

分 类 号：TN248.34[电子电信—物理电子学]