基于碳管/石墨烯/GaAs双异质结自驱动的近红外光电探测器  

Self-powered Near-infrared Photodetector Based on Single-walled Carbon Nanotube/Graphene/GaAs Double Heterojunctions

作　　者：陶泽军 霍婷婷 尹欢 苏言杰 TAO Zejun;HUO Tingting;YIN Huan;SU Yanjie(Key Laboratory of Thin Film and Microfabrication of the Ministry of Education,School of Electronics,Information and Electrical Engineering,Shanghai Jiaotong University,Shanghai 200240,CHN)

机构地区：[1]上海交通大学电子信息与电气工程学院薄膜与微细技术教育部重点实验室,上海200240

出　　处：《半导体光电》2020年第2期164-168,172,共6页Semiconductor Optoelectronics

基　　金：国家自然科学基金项目(61974089).

摘　　要：基于单壁碳纳米管(SWCNT)/单层石墨烯/GaAs双异质结结构构筑了自驱动近红外光电探测器,利用GaAs优异的光电特性和石墨烯的高载流子迁移率特点,该光电探测器在无偏压情况下光电响应率可达393.8mA/W,比探测率达到6.48×1011 Jones,开关比为103。而且,利用半导体性SWCNT对近红外光子的高吸收特性以及SWCNT/石墨烯异质结对SWCNT产生光生载流子进行有效分离,使得该双异质结光电器件的光谱响应可拓展至1 064nm,突破了GaAs自身的响应极限860nm。In this paper,a self-powered near-infrared photodetector was fabricated based on a single-walled CNT(SWCNT)/graphene/GaAs double heterojunction structure.Due to the excellent photoelectric properties of GaAs and high carrier mobility of graphene,the photodetector exhibits a high photoresponsivity,detectivity and the on/off ratio of 393.8 mA/W,6.48×1011 Jones and 103,respectively.More importantly,combing the near-infrared light absorption of SWCNTs with the photo-generated carriers effectively separated by the SWCNT/graphene heterojunction,the spectral response of the double heterojunction device is broadened to1 064 nm,breaking through the absorption limit of GaAs itself.

关 键 词：SWCNT 单壁碳纳米管 石墨烯 GAAS 异质结 光电探测器 

分 类 号：TN36[电子电信—物理电子学]