在GaAs基电注入阴极中的Ti/Pt/Au电极制备工艺研究  

Study on Preparation Technology of Ti/Pt/Au Electrode in GaA s-Based Electron-Injection Cathode

作　　者：夏聚洋 Xia Ju-yang(East China University of Technology,Jiangxi Nanchang 330013)

机构地区：[1]东华理工大学,江西南昌330013

出　　处：《电子质量》2020年第5期128-131,共4页Electronics Quality

基　　金：国家自然科学基金资助(项目编号:61661002)。

摘　　要：制备Ga As基电注入阴极需要在p型Ga As材料上制备周期性分布的金属薄膜电极。实验中,分别采用正性光刻胶AZ5214和负性光刻胶RPN1150作为掩膜层,利用热阻蒸发法和电子束蒸发法在材料表面沉积Ti/Pt/Au薄膜,通过薄膜剥离技术去除多余的金属薄膜,形成基极电极。实验结果表明采用负性光刻胶制备的电极质量更好,正性光刻胶制备的电极边缘粗糙,合理地沉积Ti/Pt/Au薄膜厚度可提高电注入阴极的基极电极质量,从而提升电注入阴极的性能。The preparation of GaAs-based electron-injection cathode required the preparation of a periodic distributed metal film electrode on a p-type GaAs material.In the experiment,positive photoresist AZ5214 and negative photoresist RPN1150 were used as masks,and Ti/Pt/Au films were deposited on the material surface by thermal resistance evaporation and electron beam evaporation.The excess metal film was removed by thin film stripping technology to form the base electrodes.The experimental results showed that the electrode prepared by negative photoresist was of better quality,and the edges of electrodes prepared by positive photoresist was rough.Reasonable design of Ti/Pt/Au film thickness can improve the quality of the base electrode of the electron-injection cathode,and the performance of electron-injection cathode was improved.

关 键 词：电注入阴极 光刻胶 Ti/Pt/Au薄膜电极 金属沉积 

分 类 号：TN305[电子电信—物理电子学]