基于PSP-SOI,BSIM-IMG和HiSIM-SOTB的DG SOI建模与仿真  

DG SOI Modeling and Simulation Based on PSP-SOI,BSIM-IMG and HiSIM-SOTB

作　　者：汪国芳 刘军[1] 吴钰鑫 罗琳 WANG Guofang;LIU Jun;WU Yuxin;LUO Lin(Key Laboratory for RF Circuits and Systems,Ministry of Education,Hangzhou Dianzi University,Hangzhou Zhejiang 310018,China)

机构地区：[1]杭州电子科技大学射频电路与系统教育部重点实验室,浙江杭州310018

出　　处：《杭州电子科技大学学报（自然科学版）》2020年第3期7-13,共7页Journal of Hangzhou Dianzi University：Natural Sciences

摘　　要：基于p型衬底的DG SOI MOSFET器件,分析了PSP-SOI,BSIM-IMG和HiSIM-SOTB模型器件建模的可适用性。对3种模型的物理机理和数学方程进行研究,提取器件的直流特性及参数值。实验数据对比结果表明:相比PSP-SOI和HiSIM-SOTB,BSIM-IMG的仿真精度分别提高了2.08%和7.10%。所以,BSIM-IMG更适用于DG SOI MOSFET器件直流特性建模。Based on the p-type substrate DG SOI MOSFET device,this paper analyzes the applicability of PSP-SOI,BSIM-IMG and HiSIM-SOTB model device modeling.The physical mechanism and mathematical equations of the three models are studied,and the DC characteristics and parameters of the devices are extracted.The comparison of experimental data shows that compared with PSP-SOI and HiSIM-SOTB,the simulation accuracy of BSIM-IMG is improved by 2.08% and 7.10%,respectively.Therefore,BSIM-IMG is more suitable for modeling the DC characteristics of DG SOI MOSFET devices.

关 键 词：PSP-SOI BSIM-IMG HiSIM-SOTB 双栅 MOSFET 直流特性 

分 类 号：TN386[电子电信—物理电子学]