一种碲镉汞长波红外探测器暗电流测试方法  

The method of dark currents measurement in infrared long wave HgCdTe detector

作　　者：王亮[1] 徐长彬[1] WANG Liang;XU Chang-bin(North China Research Institute of Electro-Optics,Beijing 100015,China)

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《激光与红外》2020年第5期563-566,共4页Laser & Infrared

摘　　要：碲镉汞红外焦平面探测器的暗电流一般是在无法接受到外界热辐射的状态下进行测试,这种测试方法需要在特殊的杜瓦结构里进行测试,只能在实验室进行测试。本文介绍了一种在实际应用杜瓦结构中评价碲镉汞长波红外探测器暗电流的测试方法,该方法不需要改变组件结构,仅通过常规的性能测试和利用理论公式计算就可得到暗电流数值。对320×256长波碲镉汞探测器组件的试验结果表明,用该方法得到的暗电流结果与实验室得到的暗电流结果非常接近,可作为红外焦平面探测器暗电流评估的快捷方法。Dark currents in HgCdTe detectors are typically tested in a state where they cannot be exposed to external thermal radiation.This method requires testing in special Dewar structures and can only be tested in the laboratory.In this paper introduces a method to evaluate dark current of long wave infrared HgCdTe detector in common Dewar structure.The method does not need to change the structure of the component but can get the dark current value only through the conventional performance test and calculation by theoretical formula.The test results of the 320×256 LW infrared detector show that the dark current obtained by this method is very close to the dark current obtained in the laboratory,so can be used as a quick method to evaluate the dark current in the infrared focal plane detector.

关 键 词：红外探测器 焦平面 暗电流 

分 类 号：TN215[电子电信—物理电子学]