抑制In元素在CdTe中的退火扩散  

Restrain In diffusion CdTe in a anneal process

作　　者：王丛[1] 王文燕[1] 周朋[1] 赵超[1] 段建春[1] 周立庆[1] WANG Cong;WANG Wen-yan;ZHOU Peng;ZHAO Chao;DUAN Jian-chun(North China Research Institute of Electro-Optics,Beijing 100015)

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《激光与红外》2020年第5期583-585,共3页Laser & Infrared

摘　　要：分子束外延HgCdTe/InSb材料需要阻止In元素在HgCdTe中的不受控扩散。我们使用CdTe缓冲层作为阻挡层,以期控制In的扩散。为研究In元素在CdTe材料中的扩散,我们使用分子束外延方法获得CdTe/InSb样品。考虑到在退火时In元素可能通过环境扩散污染材料,我们使用SiO2作为钝化层,通过对比试验发现In元素通过环境扩散污染表面的证据,为控制In元素的扩散提供新的思路。Molecular beam epitaxy HgCdTe/InSb materials need to prevent uncontrolled diffusion of In elements in HgCdTe.We use CdTe buffer layer as barrier layer to control In diffusion.In order to study the diffusion of In in CdTe materials,the CdTe/InSb samples are obtained by molecular beam epitaxy.Considering that In element may pollute the material through environmental diffusion during annealing,we use the SiO2 is as passivation layer,and find evidence of in element polluting the surface through environmental diffusion through comparative tests,which provides a new idea for controlling in element diffusion.

关 键 词：INSB CDTE In扩散 钝化层 

分 类 号：TN213[电子电信—物理电子学]