Low on-resistance 1.2 kV 4H-SiC power MOSFET with Ron, sp of 3.4 mΩ·cm^2  

作　　者：Qiang Liu Qian Wang Hao Liu Chenxi Fei Shiyan Li Runhua Huang Song Bai 

机构地区：[1]State Key Laboratory of Wide-Bandgap Semiconductor Power Electronic Devices,Nanjing Electronic Devices Institute,Nanjing 210016,China

出　　处：《Journal of Semiconductors》2020年第6期85-88,共4页半导体学报（英文版）

基　　金：supported by the National Science and Technology Major Project(No.2017YFB0102302)。

摘　　要：A 4H-SiC power MOSFET with specific on-resistance of 3.4 mΩ·cm^2 and breakdown voltage exceeding 1.5 kV is designed and fabricated.Numerical simulations are carried out to optimize the electric field strength in gate oxide and at the surface of the semiconductor material in the edge termination region.Additional n-type implantation in JFET region is implemented to reduce the specific on-resistance.The typical leakage current is less than 1μA at VDS=1.4 kV.Drain–source current reaches 50 A at VDS=0.75 V and VGS=20 V corresponding to an on-resistance of 15 mΩ.The typical gate threshold voltage is 2.6 V.

关 键 词：4H-SIC electric field strength floating guard ring specific on-resistance 

分 类 号：TN386[电子电信—物理电子学]