VDMOS器件参数及IDSS失效问题研究  

Study on VDMOS Device Parameters and IDSS Failure

作　　者：李明 姚雪霞 曹婷 刘国梁 LI Ming;YAO Xuexia;CAO Ting;LIU Guoliang(Shenzhen Founder Microelectronics Co.,Ltd.,Shenzhen 518116,China)

机构地区：[1]深圳方正微电子有限公司,广东深圳518116

出　　处：《现代信息科技》2020年第6期27-30,共4页Modern Information Technology

摘　　要：功率VDMOS就是垂直导电的双扩散结构器件,功率VDMOS克服了其他MOS的各种缺点,是在功率集成工艺基础上发展起来的新一代电子器件。IDSS是衡量VDMOS器件性能的一个重要参数,同时,影响VDMOS产品良率的各个参数,也是一个难以解决的问题。从VDMOS器件结构及工艺入手,对参数失效原因做了较全面的分析,总结了VDMOS器件参数失效的因素及对应的工艺控制难点。以供VDMOS工作者以及相关技术人员参考。Power VDMOS is a vertically conductive double-diffusion structure device,which overcomes various shortcomings of other MOS and is a new generation of electronic devices developed on the basis of power integration technology.IDSS is an important parameter to measure the performance of VDMOS devices.Meanwhile,it is also a difficult problem to solve that various parameters affect the yield of VDMOS products.Starting from the structure and technology of VDMOS device,the cause of parameter failure is analyzed comprehensively,and the factors of parameter failure of VDMOS device and the corresponding process control difficulties are summarized.For reference of VDMOS workers and related technicians.

关 键 词：VDMOS IDSS DS漏电 DS短路 

分 类 号：TN386[电子电信—物理电子学]