Improvements in reverse breakdown characteristics of THz GaAs Schottky barrier varactor based on metal-brim structure  

作　　者：Lu-Wei Qi Xiao-Yu Liu Jin Meng De-Hai Zhang Jing-Tao Zhou 祁路伟;刘晓宇;孟进;张德海;周静涛(Key Laboratory of Microwave Remote Sensing,National Space Science Center,Chinese Academy of Sciences,Beijing 100190,China;Institute of Microelectronics of the Chinese Academy of Sciences,Beijing 100029,China;University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]Key Laboratory of Microwave Remote Sensing,National Space Science Center,Chinese Academy of Sciences,Beijing 100190,China [2]Institute of Microelectronics of the Chinese Academy of Sciences,Beijing 100029,China [3]University of Chinese Academy of Sciences,Beijing 100049,China

出　　处：《Chinese Physics B》2020年第5期464-468,共5页中国物理B（英文版）

摘　　要：The excellent reverse breakdown characteristics of Schottky barrier varactor(SBV)are crucially required for the application of high power and high efficiency multipliers.The SBV with a novel Schottky structure named metal-brim is fabricated and systemically evaluated.Compared with normal structure,the reverse breakdown voltage of the new type SBV improves from-7.31 V to-8.75 V.The simulation of the Schottky metal-brim SBV is also proposed.Three factors,namely distribution of leakage current,the electric field,and the area of space charge region are mostly concerned to explain the physical mechanism.Schottky metal-brim structure is a promising approach to improve the reverse breakdown voltage and reduce leakage current by eliminating the accumulation of charge at Schottky electrode edge.

关 键 词：breakdown characteristics Schottky metal-brim Schottky barrier varactor GAAS 

分 类 号：TN311.7[电子电信—物理电子学]