基于3D图像重现的熔融二氧化硅的形态研究  

Melting Representation Model of Silicon Dioxide Analyzed Based on Images

作　　者：祝子为 滕世宇 赵浩天 ZHU Ziwei;TENG Shiyu;ZHAO Haotian(Dalian University of Technology,Dalian Liaoning 116024)

机构地区：[1]大连理工大学,辽宁大连116024

出　　处：《河南科技》2020年第10期34-37,共4页Henan Science and Technology

摘　　要：本文基于SFS模型和边缘检测技术对二氧化硅的实际熔化速率进行定量分析,并得出二氧化硅在1500℃条件下的熔化速率,然后推知其晶体构成等理化性质。希望本文能为学者研究二氧化硅晶体变化提供借鉴。In this paper,based on SFS model and edge detection technology,the actual melting rate of silicon dioxide was quantitatively analyzed,and the melting rate of silicon dioxide at 1500℃was obtained,and then the physical and chemical properties such as crystal composition were deduced.It is hoped that this paper can provide reference for scholars to study the change of silica crystal.

关 键 词：边缘检测 图像处理 卷积 SFS 

分 类 号：TB383.1[一般工业技术—材料科学与工程]