Surface Morphology Improvement of Non-Polar a-Plane Ga N Using a Low-Temperature GaN Insertion Layer  

作　　者：Shen Yan Xiao-Tao Hu Jun-Hui Die Cai-Wei Wang Wei Hu Wen-Liang Wang Zi-Guang Ma Zhen Deng Chun-Hua Du Lu Wang Hai-Qiang Jia Wen-Xin Wang Yang Jiang Guoqiang Li Hong Chen 严珅;胡小涛;迭俊珲;王彩玮;胡巍;王文樑;马紫光;邓震;杜春花;王禄;贾海强;王文新;江洋;李国强;陈弘(Key Laboratory for Renewable Energy,Beijing Key Laboratory for New Energy Materials and Devices,Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190;Center of Materials and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049;State Key Laboratory of Luminescent Materials and Devices,South China University of Technology,Guangzhou 510640;The Yangtze River Delta Physics Research Center,Liyang 213000;Songshan Lake Materials Laboratory,Dongguan 523808)

机构地区：[1]Key Laboratory for Renewable Energy,Beijing Key Laboratory for New Energy Materials and Devices,Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190 [2]Center of Materials and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049 [3]State Key Laboratory of Luminescent Materials and Devices,South China University of Technology,Guangzhou 510640 [4]The Yangtze River Delta Physics Research Center,Liyang 213000 [5]Songshan Lake Materials Laboratory,Dongguan 523808

出　　处：《Chinese Physics Letters》2020年第3期69-72,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China(Grant Nos.11574362 and 61704008)。

摘　　要：We demonstrate that a low-temperature Ga N insertion layer could significantly improve the surface morphology of non-polar a-plane Ga N.The two key factors in improving the surface morphology of non-polar a-plane Ga N are growth temperature and growth time of the Ga N insertion layer.The root-mean-square roughness of a-plane Ga N is reduced by 75%compared to the sample without the Ga N insertion layer.Meanwhile,the Ga N insertion layer is also beneficial for improving crystal quality.This work provides a simple and effective method to improve the surface morphology of non-polar a-plane Ga N.

关 键 词：INSERTION POLAR ROUGHNESS 

分 类 号：O782[理学—晶体学]