Effects of Total-Ionizing-Dose Irradiation on Single-Event Burnout for Commercial Enhancement-Mode AlGaN/GaN High-Electron Mobility Transistors  

作　　者：Si-Yuan Chen Xin Yu Wu Lu Shuai Yao Xiao-Long Li Xin Wang Mo-Han Liu Shan-Xue Xi Li-Bin Wang Jing Sun Cheng-Fa He Qi Guo 陈思远;于新;陆妩;姚帅;李小龙;王信;刘默寒;席善学;王利斌;孙静;何承发;郭旗(Key Laboratory of Functional Materials and Devices for Special Environments,Xinjiang Technical Institute of Physics and Chemistry,Chinese Academy of Sciences,Urumqi 830011;Xinjiang Key Laboratory of Electronic Information Material and Device,Urumqi 830011;University of Chinese Academy of Sciences,Beijing 100049)

机构地区：[1]Key Laboratory of Functional Materials and Devices for Special Environments,Xinjiang Technical Institute of Physics and Chemistry,Chinese Academy of Sciences,Urumqi 830011 [2]Xinjiang Key Laboratory of Electronic Information Material and Device,Urumqi 830011 [3]University of Chinese Academy of Sciences,Beijing 100049

出　　处：《Chinese Physics Letters》2020年第4期88-91,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant Nos. U1532261,U1630141,and 61534008;the West Light Foundation of Chinese Academy of Sciences under Grant No. 2018-XBQNXZ-B-003

摘　　要：We investigate the synergism effect of total ionizing dose(TID)on single-event burnout(SEB)for commercial enhancement-mode AlGaN/GaN high-electron mobility transistors.Our experimental results show that the slight degradation of devices caused by gamma rays can affect the stability of the devices during the impact of high energy particles.During heavy ion irradiation,the safe working values of drain voltage are significantly reduced for devices which have already been irradiated by 60Co gamma rays before.This could be attributed to more charges trapped caused by 60Co gamma rays,which make GaN devices more vulnerable to SEB.Moreover,the electrical parameters of GaN devices after 60Co gamma and heavy-ion irradiations are presented,such as the output characteristic curve,effective threshold voltages,and leakage current of drain.These results demonstrate that the synergistic effect of TID on SEB for GaN power devices does in fact exist.

关 键 词：ALGAN/GAN DRAIN Electron 

分 类 号：TN386[电子电信—物理电子学]