太阳能电池用原子层沉积超薄氧化硅技术研究  

Research on the Deposition of Ultrathin Silicon Dioxide by Atomic layer Deposition in Solar Cell

作　　者：张威 许烁烁 唐电 彭宜昌 刘舟 吴易龙 ZHANG Wei;XU Shuoshuo;TANG Dian;PENG Yichang;LIU Zhou;WU Yilong(Hunan Red Solar Photoelectricity Science and Technology Co.Ltd.,Changsha 410111,China)

机构地区：[1]湖南红太阳光电科技有限公司,湖南长沙410111

出　　处：《电子工业专用设备》2020年第3期1-4,12,共5页Equipment for Electronic Products Manufacturing

摘　　要：从高效太阳能电池结构要求出发,分析了超薄氧化层的作用,在自研设备的基础上,采用强氧化性的O2等离子体与硅前驱体进行了PEALD沉积研究。在源瓶温度80℃、沉积温度200℃的工艺条件下,薄膜单循环沉积速率达到0.12 nm。对沉积的氧化硅进行致密性HF腐蚀测试,腐蚀速率为4.8 nm/min。薄膜致密性已接近热氧化法制备的氧化硅薄膜。Based on the requirements of high-efficiency solar cell structure,the effect of ultra-thin silicon dioxide layer was analyzed in this paper.On the basis of self-developed equipment,PEALD deposition process was studied by using oxidizing O2 plasma and silicon precursor.Under the process conditions of the source bottle temperature of 80℃and the deposition temperature of 200℃,the single-cycle deposition rate reaches 0.12 nm.HF corrosion test was carried out on the deposited silicon dioxide.The corrosion rate was 4.8 nm/min.This compactness of thin film is close to that of silicon dioxide films prepared by thermal oxidation.

关 键 词：太阳能电池 原子层沉积 超薄薄膜 氧化硅 

分 类 号：TN304.055[电子电信—物理电子学]