晶圆减薄抛光工艺对芯片强度影响的研究  

Study on the Influence of Wafer Thinning and Polishing Process on Chip Strength

作　　者：杨生荣 王海明 叶乐志[2] YANG Shengrong;WANG Haiming;YE Lezhi(CETC Beijing Electronic Equipment Co.,Ltd,Beijing 100176,China;Beijing University of Technology,Beijing 100124,China)

机构地区：[1]北京中电科电子装备有限公司,北京100176 [2]北京工业大学,北京100124

出　　处：《电子工业专用设备》2020年第3期13-15,22,共4页Equipment for Electronic Products Manufacturing

摘　　要：论述了芯片封装工艺中的减薄、抛光工艺对芯片强度的影响,通过三点弯曲强度测试方法,分析对比减薄工艺以及在减薄后进行化学机械抛光(CMP)和干式抛光(DP)消除应力后芯片强度的分布。实验表明,晶圆减薄磨削后,对背面磨削面进行去应力抛光,会获得比较高的芯片强度。The influence of thinning and polishing process on chip strength in IC packaging process is summarized.By 3-point bending strength test method,the chip strength distribution after thinning,CMP(Chemical Mechanical Polishing)and DP(Dry Polishing)stress relief is analyzed and compared.The experiment shows that the chip with high strength can be obtained by stress relief polishing on the back grinding surface after wafer thinning grinding.

关 键 词：减薄 芯片强度 应力去除 化学机械抛光 干式抛光 

分 类 号：TN305.2[电子电信—物理电子学]