A photomemory by selective-assembling hybrid porphyrin-silicon nanowire field-effect transistor  

作　　者：Gong CHEN Bocheng YU Xiaokang LI Xiaoqiao DONG Xiaoyan XU Zhihong LI Ru HUANG Ming LI 

机构地区：[1]Key Laboratory of Microelectronic Devices and Circuits(MOE),Institute of Microelectronics,Peking University,Beijing 100871,China [2]National Key Laboratory of Science and Technology on Micro/Nano Fabrication,Peking University,Beijing 100871,China [3]Faculty of Information Technology,Beijing University of Technology,Beijing 100124,China

出　　处：《Science China(Information Sciences)》2020年第6期249-251,共3页中国科学（信息科学）（英文版）

基　　金：partly supported by National Key Research and Development Plan of China (Grant No. 2016YFA0200504);National Natural Science Foundation of China (Grant No. 61421005);111 Project (Grant No. B18001)。

摘　　要：Dear editor,Recently, the integration of photosensitive material and electronic nanodevice has been the center of attention with Internet of things (IoT)technology development [1–3]. The immobilization of such photoactive molecules on the semiconductor surface was necessarily adopted to employ their photoelectric characteristics which can be observed in the solution.

关 键 词：porphyrin-silicon nanowire field-effect transistor PHOTOELECTRIC NANODEVICE 

分 类 号：TN386[电子电信—物理电子学]