一种结构简单的高精确度带隙基准源设计  

Design of a simple structure bandgap reference with high precision

作　　者：张泽伟 宋树祥[1] 蒋品群[1] 庞中秋 ZHANG Zewei;SONG Shuxiang;JIANG Pinqun;PANG Zhongqiu(College of Electronic Engineering,Guangxi Normal University,Guilin Guangxi 541004,China)

机构地区：[1]广西师范大学电子工程学院,广西桂林541004

出　　处：《太赫兹科学与电子信息学报》2020年第2期345-349,共5页Journal of Terahertz Science and Electronic Information Technology

基　　金：国家自然科学基金资助项目(61361011);广西自然科学基金资助项目(2017GXNSFAA198363)。

摘　　要：设计了一款快速启动、高稳定性的实用型带隙基准电压源。基准源电路基于110 nm的CMOS标准工艺实现,使用Cadence软件进行仿真。仿真表明,在室温下,电源电压为3.3V时,输出基准电压为1.2 V;在-40℃~85℃范围内温度漂移系数为33 ppm/℃;电路启动时间为0.5μs;电源电压抑制比在低频时达到-61 dB;功耗为0.967 mW;版图面积为50μm×180μm。该电路结构简单,易于集成,可应用于高速、高精确度的数模转换器(DAC)。A practical bandgap reference voltage source is designed with quick start and high stability. It selects 110 nm CMOS(Complementary Metal Oxide Semiconductor) device technology and simulation software of Cadence. The simulation results indicate that under room temperature, the output voltage is 1.2 V under 3.3 V power supply;the temperature drift coefficient is 33 ppm/℃ between-40 ℃-85 ℃;it takes 0.5 μs to start the circuit;and the power consumption is 0.967 mW;Power Supply Rejection Ratio(PSRR) reaches-61 dB in the range of low frequency;the layout covers an area of 50 μm×180 μm. Because its simple structure and being easy to be integrated, the circuit can be applied to DAC(Digital to Analog Converter) with high speed and high precision.

关 键 词：带隙基准源 互补金属氧化物半导体 温度系数 电源抑制比 

分 类 号：TN432[电子电信—微电子学与固体电子学]