先进硅基前驱体的应用研究与技术进展  

Application Research and Technology Progress on Advanced Silicon-Based Precursors

作　　者：常欣 万烨 赵雄[1,2,3] 严大洲 袁振军[1,2] 郭树虎 Chang Xin;Wan Ye;Zhao Xiong;Yan Dazhou;Yuan Zhenjun;Guo Shuhu(National Engineering Laboratory of Polysilicon Manufacturing Technology,Luoyang 471000,China;China Silicon Corporation Ltd.,Luoyang 471000,China;China ENFI Engineering Co.,Ltd.,Beijing 100038,China)

机构地区：[1]多晶硅制备技术国家工程实验室,河南洛阳471000 [2]洛阳中硅高科技有限公司,河南洛阳471000 [3]中国恩菲工程技术有限公司,北京100038

出　　处：《半导体技术》2020年第6期409-418,共10页Semiconductor Technology

基　　金：河南省科技人才研发专项资助项目(174200510014);郑洛新国家自主创新示范区创新引领型产业集群专项资助项目(181200212700)。

摘　　要：前驱体材料广泛应用于集成电路的关键工艺中,如外延、光刻、化学气相沉积以及原子层沉积。其中硅基前驱体是重要且用量较大的一个分支,近年来一直是先进集成电路材料领域研究的热点之一。以集成电路制造工艺和器件结构的技术发展为基础,综述了业界几种较为流行的硅基前驱体材料的结构与性能,其中包括二氯硅烷(DCS)、乙硅烷(DS)、八甲基环四硅氧烷(OMCTS)、四甲基硅烷(4MS)、六氯乙硅烷(HCDS)、双(叔丁氨基)硅烷(BTBAS)、双(二乙氨基)硅烷(BDEAS)、三(二甲胺基)硅烷(3DMAS)和三甲硅烷基胺(TSA)。系统介绍了硅基前驱体的应用现状和研究进展,并对其合成和提纯工艺进行了探讨。Precursor materials are widely used in the key processes of the integrated circuit(IC),such as epitaxy,photolithography,chemical vapor deposition and atomic layer deposition.Silicon-based precursor is an important branch with large amount of demand and has become one of the research hotspots in the field of advanced IC materials in recent years.Based on the technology development of IC manufacturing processes and device structures,the structures and properties of several mainstream silicon-based precursor materials including dichlorosilane(DCS),disilane(DS),octamethylcyclotetrasiloxane(OMCTS),tetramethylsilane(4MS),hexachlorodisilane(HCDS),bis(tert-butylamino)silane(BTBAS),bis(diethylamino)silane(BDEAS),tris(dimethylamino)silane(3DMAS)and trisilylamine(TSA)are summarized,application status and research progresses of the silicon-based precursors are systematically introduced,and the corresponding synthesis and purification processes of silicon-based precursors are also analyzed and discussed.

关 键 词：集成电路(IC) 硅基前驱体 化学气相沉积(CVD) 原子层沉积 提纯工艺 

分 类 号：TN304[电子电信—物理电子学]