不同锡硫配比及热处理参数对SnxSy薄膜结构特性的影响  

DIFFERENT TIN-SULFUR RATIO AND HEAT TREATMENT PARAMETERS FOR SnxSy EFFECT OF FILM STRUCTURE CHARACTERISTICS

作　　者：白海平[1] 李健[2] 姚虹[1] 么强[1] BAI Haiping;LI Jian;YAO Hong;YAO Qiang(College of Science,Inner Mongolia Agricultural University,Hohhot 010080,China;School of Physical Science and Technology,Inner Mongolia University,Hohhot 010021,China)

机构地区：[1]内蒙古农业大学理学院,呼和浩特010018 [2]内蒙古大学物理科学与技术学院,呼和浩特010021

出　　处：《内蒙古农业大学学报（自然科学版）》2020年第2期80-87,共8页Journal of Inner Mongolia Agricultural University(Natural Science Edition)

基　　金：内蒙古自治区高等学校科学技术研究项目(NJZY18055);内蒙古农业大学基础学科研究项目(JC2013003).

摘　　要：真空热蒸发法制备纳米SnxSy薄膜。在玻璃衬底制备好的薄膜利用不同的热处理工艺条件对其进行热处理,可得到晶相结构性能良好的纳米SnxSy多晶薄膜。研究发现不同锡硫摩尔配比的混合蒸发粉末对合成SnxSy薄膜有较大的影响。当混合粉末中锡硫摩尔配比为1:0.8制备的薄膜,在氮气气氛下进行热处理,热处理条件为T=330℃,t=40 min时,可得到P型SnS薄膜,其微观结构良好、且沿(021)晶向择优生长,属正交晶系,晶粒尺寸约为62.17 nm。当混合粉末中锡硫摩尔配比为1:1.2制备的薄膜,热处理温度为430℃在氮气保护下热处理40 min,可获得Sn2S3薄膜,导电类型为N型,并且晶相结构良好,也属正交晶系,其晶粒尺寸约为60.37 nm。当混合粉末中锡硫摩尔配比为1:1.5时,同样热处理温度为430℃在氮气保护气氛中热处理40 min,可获得SnS2薄膜,其结构性能良好,导电类型为N型,属六角晶系,其晶粒尺寸约77.07 nm。能谱分析给出,Sn2S3薄膜化学计量偏离标准化学计量比稍大,SnS,SnS2薄膜化学计量与标准化学计量比比较接近.Nano-SnxSy film was prepared on the glass substrate by vacuum thermal evaporation.Nano-SnxSy polycrystalline films with good crystalline structure and properties could be obtained by heat treatment of the films prepared on glass substrates under different heat treatment conditions.It was found that the mixed evaporated powders with different molar ratios of tin and sulphur had a great influence on the synthesis of SnxSy thin films.When the film prepared by the molar ratio of tin to sulfur in the mixed powder is 1:0.8,the heat treatment condition was T=330° C,t=40 min,P-SnS films could be obtained in N2.The films had good microstructures and grew preferentially along(021) crystal direction.They belong to orthorhombic crystalline system with a grain size of about 62.17 nm.When the film prepared by the molar ratio of tin to sulfur in the mixed powder was1:1.2,the heat treatment temperature was 430°C and heat treatment under nitrogen protection for 40 min,the Sn2S3 film could be obtained.The conductive type of Sn2S3 thin films was N-type,and the crystal structure was good.The grain size of Sn2S3 thin films was about 60.37 nm..When the molar ratio of tin to sulfur in the mixed powder was 1:1.5,the heat treatment temperature was 430°C and heat treatment in a nitrogen atmosphere for 40 min,the SnS2 film could be obtained,and the structure was good,the conductivity type was N type,and belong to hexagonal crystal system.Its grain size was about 77.07 nm.The energy spectrum analysis showed that the stoichiometry of Sn2S3 film deviated slightly from the standard stoichiometric ratio,and the stoichiometry of SnS and SnS2 films was close to the standard stoichiometric ratio.

关 键 词：SnxSy 薄膜 真空蒸发 结构特性 

分 类 号：O484[理学—固体物理]