High-performance midwavelength infrared detectors based on InAsSb nBn design  

作　　者：Xuan Zhang Qing-Xuan Jia Ju Sun Dong-Wei Jiang Guo-Wei Wang Ying-Qiang Xu Zhi-Chuan Niu 张璇;贾庆轩;孙矩;蒋洞微;王国伟;徐应强;牛智川(State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 101408,China;Center of Materials Science and Optoelectronics Engineering,College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 100049,China;Beijing Academy of Quantum Information Sciences,Beijing 100193,China)

机构地区：[1]State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China [2]College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 101408,China [3]Center of Materials Science and Optoelectronics Engineering,College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 100049,China [4]Beijing Academy of Quantum Information Sciences,Beijing 100193,China

出　　处：《Chinese Physics B》2020年第6期549-552,共4页中国物理B（英文版）

基　　金：National Key Technologies Research and Development Program of China(Grant No.2018YFA0209104);the Major Program of the National Natural Science Foundation of China(Grant No.61790581).

摘　　要：we report n Bn photodetectors based on In As0.91 Sb0.09 with a 100% cut-off wavelength of 4.75 μm at 300 K. The band of an n Bn detector is similar to that of a standard pin detector, but there is special wide bandgap Al As0.08 Sb0.92 barrier layer in the n Bn detector, in which the depletion region of n Bn detector exists. The n Bn design has many advantages, such as low dark current and high quantum efficiency, because the n Bn design can suppress the generation–recombination(GR)current that is the main composition of standard pin detector dark current. The constant slope of the Arrhenius plot of J0–1/T indicates the absence of the generation–recombination dark current. We fabricate an n Bn detector with a quantum efficiency(QE) maximum of ~ 60% under-0.2-V bias voltage. The In As Sb n Bn detectors may be a competitive candidate for midwavelength infrared detector.

关 键 词：infrared detector INASSB NBN 

分 类 号：TN215[电子电信—物理电子学]